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1. WO2012060416 - ION MILLING DEVICE

Publication Number WO/2012/060416
Publication Date 10.05.2012
International Application No. PCT/JP2011/075306
International Filing Date 02.11.2011
IPC
H01J 37/20 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
02Details
20Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
H01J 37/16 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
02Details
16Vessels; Containers
H01J 37/30 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
30Electron-beam or ion-beam tubes for localised treatment of objects
H01J 37/305 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
30Electron-beam or ion-beam tubes for localised treatment of objects
305for casting, melting, evaporating, or etching
CPC
H01J 2237/20207
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
2237Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
20Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
202Movement
20207Tilt
H01J 2237/20214
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
2237Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
20Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
202Movement
20214Rotation
H01J 2237/26
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
2237Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
26Electron or ion microscopes
H01J 37/20
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
02Details
20Means for supporting or positioning the objects or the material; Means for adjusting diaphragms or lenses associated with the support
H01J 37/3005
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
30Electron-beam or ion-beam tubes for localised treatment of objects
3002Details
3005Observing the objects or the point of impact on the object
H01J 37/3007
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
30Electron-beam or ion-beam tubes for localised treatment of objects
3002Details
3007Electron or ion-optical systems
Applicants
  • 株式会社 日立ハイテクノロジーズ HITACHI HIGH-TECHNOLOGIES CORPORATION [JP]/[JP] (AllExceptUS)
  • 岩谷 徹 IWAYA Toru [JP]/[JP] (UsOnly)
  • 武藤 宏史 MUTO Hirobumi [JP]/[JP] (UsOnly)
  • 高須 久幸 TAKASU Hisayuki [JP]/[JP] (UsOnly)
  • 上野 敦史 KAMINO Atsushi [JP]/[JP] (UsOnly)
  • 金子 朝子 KANEKO Asako [JP]/[JP] (UsOnly)
Inventors
  • 岩谷 徹 IWAYA Toru
  • 武藤 宏史 MUTO Hirobumi
  • 高須 久幸 TAKASU Hisayuki
  • 上野 敦史 KAMINO Atsushi
  • 金子 朝子 KANEKO Asako
Agents
  • 特許業務法人浅村特許事務所 ASAMURA PATENT OFFICE, p.c.
Priority Data
2010-24802205.11.2010JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) ION MILLING DEVICE
(FR) DISPOSITIF DE GRAVURE IONIQUE
(JA) イオンミリング装置
Abstract
(EN)
An ion milling device of the present invention is provided with a tilt stage (8) which is disposed in a vacuum chamber (15) and has a tilt axis parallel to a first axis orthogonal to an ion beam, a drive mechanism (9, 51) which has a rotation axis and a tilt axis parallel to a second axis orthogonal to the first axis and rotates or tilts a sample (3), and a switching unit which enables switching between a state in which the ion beam is applied while the sample is rotated or swung while the tilt stage is tilted, and a state in which the ion beams is applied while the tilt stage is brought into an untilted state and the sample is swung. Consequently, the ion milling device capable of performing cross-section processing and flat processing of the sample in the same vacuum chamber is implemented.
(FR)
L'invention concerne un dispositif de gravure ionique comprenant un étage d'inclinaison (8) qui est disposé dans une chambre à vide (15) et dont l'axe d'inclinaison est parallèle à un premier axe perpendiculaire à un faisceau ionique ; un mécanisme d'entraînement (9, 51), dont l'axe de rotation et l'axe d'inclinaison sont parallèles à un second axe perpendiculaire au premier axe, qui fait tourner ou incline l'échantillon (3) ; et une unité de commutation qui permet le passage d'un état dans lequel le faisceau ionique est appliqué pendant que l'échantillon tourne ou bascule alors que l'étage d'inclinaison est incliné à un état dans lequel le faisceau ionique est appliqué pendant que l'étage d'inclinaison est redressé et que l'échantillon bascule. En conséquence, le dispositif de gravure ionique capable d'exécuter un traitement en coupe et un traitement à plat de l'échantillon dans la même chambre sous vide est mis en œuvre.
(JA)
 本発明のイオンミリング装置は、真空チャンバ内(15)に配置されイオンビームに直交する第1の軸に平行な傾斜軸を持つ傾斜ステージ(8)と、前記第1の軸に直交する第2の軸に平行な回転軸及び傾斜軸を持ち試料(3)を回転或いは傾斜させる駆動機構(9、51)と、前記傾斜ステージを傾斜させながら試料を回転或いは往復傾斜させてイオンビームを照射する状態と、前記傾斜ステージを非傾斜状態とすると共に前記試料を往復傾斜させてイオンビームを照射する状態とを切り替えることを可能にする切替部を備えている。 これにより、同一の真空チャンバ内で試料の断面加工と平面加工とを行うことが可能なイオンミリング装置が実現された。
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