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1. WO2012059203 - APPARATUS FOR TREATMENT OF SUBSTRATES

Publication Number WO/2012/059203
Publication Date 10.05.2012
International Application No. PCT/EP2011/005461
International Filing Date 28.10.2011
IPC
H01J 37/32 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes
C23C 16/44 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44characterised by the method of coating
CPC
C23C 16/4409
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
4401Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
4409characterised by sealing means
F16J 15/40
FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
16ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
JPISTONS
15Sealings
16between relatively-moving surfaces
40by means of fluid
H01J 37/3244
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
32431Constructional details of the reactor
3244Gas supply means
H01J 37/32477
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
32431Constructional details of the reactor
32458Vessel
32477characterised by the means for protecting vessels or internal parts, e.g. coatings
Applicants
  • HQ-DIELECTRICS GMBH [DE]/[DE] (AllExceptUS)
  • GSCHWANDTNER, Alexander [DE]/[DE] (UsOnly)
  • NIESS, Jürgen [DE]/[DE] (UsOnly)
  • BECKMANN, Wilhelm [DE]/[DE] (UsOnly)
Inventors
  • GSCHWANDTNER, Alexander
  • NIESS, Jürgen
  • BECKMANN, Wilhelm
Agents
  • KLANG, Alexander, H.
Priority Data
10 2010 050 258.802.11.2010DE
Publication Language German (DE)
Filing Language German (DE)
Designated States
Title
(DE) VORRICHTUNG ZUM BEHANDELN VON SUBSTRATEN
(EN) APPARATUS FOR TREATMENT OF SUBSTRATES
(FR) DISPOSITIF DE TRAITEMENT DE SUBSTRATS
Abstract
(DE)
Es ist eine Vorrichtung zum Behandeln von Substraten beschrieben, die ein Gehäuse, das im Inneren eine Prozesskammer bildet aufweist. Die Vorrichtung weist wenigstens einer Durchgangsöffnung im Gehäuse, wenigstens eine Dichtungsanordnung im Bereich der Durchgangsöffnung, um die Prozesskammer zur Umgebung hin abzudichten und wenigstens einen Gaseinlass benachbart zur wenigstens einen Dichtungsanordnung auf. Der Gaseinlass ist so angeordnet, dass hieraus austretendes Gas zwischen der Dichtung und einem Gas in der Prozesskammer, insbesondere reaktiven Gasspezies, eine Gasbarriereschicht bildet. Ferner ist eine Vorrichtung zum Behandeln von Substraten mit einem Gehäuse vorgesehen, das im Inneren eine Prozesskammer bildet, wobei das Gehäuse aus wenigstens zwei, vorzugsweise drei, die Prozesskammer radial umgebenden Seitenwandteilen aufgebaut ist. Wenigstens eine radial umlaufende Dichtungsanordnung ist zwischen Stirnseiten der Seitenwandteile vorgesehen und zwischen der wenigstens einen umlaufenden Dichtungsanordnung und der Prozesskammer ist wenigstens eine Gasführung vorgesehen, welche geeignet ist eine Gasbarriereschicht zwischen Dichtungsanordnung und Prozesskammer zu bilden.
(EN)
An apparatus is described for treatment of substrates, which has a housing which forms a process chamber in the interior. The apparatus has at least one aperture opening in the housing, at least one sealing arrangement in the area of the aperture opening, in order to seal the process chamber from the environment, and at least one gas inlet adjacent to the at least one sealing arrangement. The gas inlet is arranged such that gas emerging therefrom forms a gas barrier layer between the seal and a gas in the process chamber, in particular reactive gas species. Furthermore, an apparatus is provided for treatment of substrates having a housing which forms a process chamber in the interior, wherein the housing is formed from at least two, and preferably three, side-wall parts which radially surround the process chamber. At least one radially circumferential sealing arrangement is provided between the end faces of the side-wall parts and at least one gas guide is provided between the at least one circumferential sealing arrangement and the process chamber, which gas guide is suitable for forming a gas barrier layer between the sealing arrangement and the process chamber.
(FR)
L'invention concerne un dispositif de traitement de substrats qui présente un boîtier dont l'intérieur forme une chambre de processus. Le dispositif présente au moins un orifice de passage dans le boîtier, au moins un ensemble d'étanchéité dans la zone de l'orifice de passage afin d'assurer l'étanchéité de la chambre de processus par rapport à l'environnement, et au moins une arrivée de gaz adjacente à l'ensemble ou aux ensembles d'étanchéité. L'arrivée de gaz est disposée de telle manière que le gaz qui en sort forme une couche barrière aux gaz entre le joint d'étanchéité et un gaz présent dans la chambre de processus, en particulier une espèce gazeuse réactive. En outre, le dispositif de traitement de substrats comprenant un boîtier dont l'intérieur forme une chambre de processus est constitué d'au moins deux, de préférence de trois parties de parois latérales entourant radialement la chambre de processus. Au moins un ensemble d'étanchéité s'étendant radialement sur la périphérie est agencé entre les faces frontales des parties de parois latérales et, au moins un conduit de gaz conçu pour former une couche barrière aux gaz entre l'ensemble d'étanchéité et la chambre de processus est agencé entre l'ensemble ou les ensembles d'étanchéité périphériques et la chambre de processus.
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