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1. WO2012058961 - LIGHT-EMITTING DIODE AND METHOD FOR MANUFACTURING SAME

Publication Number WO/2012/058961
Publication Date 10.05.2012
International Application No. PCT/CN2011/078058
International Filing Date 05.08.2011
IPC
H01L 33/00 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
CPC
H01L 21/0242
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02367Substrates
0237Materials
0242Crystalline insulating materials
H01L 21/0243
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02367Substrates
02428Structure
0243Surface structure
H01L 21/02458
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02436Intermediate layers between substrates and deposited layers
02439Materials
02455Group 13/15 materials
02458Nitrides
H01L 21/0254
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02518Deposited layers
02521Materials
02538Group 13/15 materials
0254Nitrides
H01L 21/02658
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02656Special treatments
02658Pretreatments
H01L 33/007
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
005Processes
0062for devices with an active region comprising only III-V compounds
0066with a substrate not being a III-V compound
007comprising nitride compounds
Applicants
  • 西安神光安瑞光电科技有限公司 XI'AN AEPITEK OPTO-ELECTRONIC TECHNOLOGY CO., LTD. [CN]/[CN] (AllExceptUS)
  • 牛崇实 NIOU, Chorng [US]/[CN] (UsOnly)
  • 张翼德 CHANG, Andrew [CA]/[CN] (UsOnly)
Inventors
  • 牛崇实 NIOU, Chorng
  • 张翼德 CHANG, Andrew
Agents
  • 上海思微知识产权代理事务所(普通合伙) SHANGHAI SAVVY INTELLECTUAL PROPERTY AGENCY
Priority Data
201010530522.403.11.2010CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) LIGHT-EMITTING DIODE AND METHOD FOR MANUFACTURING SAME
(FR) DIODE ÉLECTROLUMINESCENTE ET SON PROCÉDÉ DE FABRICATION
(ZH) 发光二极管及其制造方法
Abstract
(EN)
Provided are a light-emitting diode and a method for manufacturing the same, the light-emitting diode including: a sapphire substrate (200); an epitaxial layer (220), an active layer (230) and a cap layer (240) disposed sequentially on the sapphire substrate (200); the surface of the sapphire substrate (200) close to the epitaxial layer (220) has a plurality of dual focal length microlens structures (201). The dual focal length microlens structure (201) can increase the reflection of light from the sapphire substrate (200) and improve the external quantum efficiency of the light-emitting diode, thereby improving the light utilization ratio of the light-emitting diode. The level of lattice matching between the sapphire substrate (200) and the other film layers can also be increased, and crystal flaws in the film layers formed on the sapphire substrate (200) can be reduced, which improves the internal quantum efficiency of the light-emitting diode.
(FR)
La présente invention concerne une diode électroluminescente et son procédé de fabrication, la diode électroluminescente comportant: un substrat saphir (200) ; une couche épitaxiale (220), une couche active (230) et une couche de couverture (240) disposées successivement sur le substrat saphir (200) ; la surface du substrat saphir (200) à proximité de la couche épitaxiale (220) comprend une pluralité de structures de microlentilles à longueur focale double (201). La structure de microlentilles à longueur focale double (201) peut accroître la réflexion de la lumière provenant du substrat saphir (200) et améliorer l'efficacité quantique externe de la diode électroluminescente, permettant ainsi l'amélioration du taux d'utilisation de lumière de la diode électroluminescente. Le niveau d'appariement de réseaux entre le substrat saphir (200) et les autres couches de film peut également être accru, et des défauts cristallins dans les couches de film formés sur le substrat saphir (200) peuvent être réduits, améliorant ainsi l'efficacité quantique interne de la diode électroluminescente.
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