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1. WO2012058535 - METHOD FOR FABRICATION OF (AL, IN, GA) NITRIDE BASED VERTICAL LIGHT EMITTING DIODES WITH ENHANCED CURRENT SPREADING OF N-TYPE ELECTRODE

Publication Number WO/2012/058535
Publication Date 03.05.2012
International Application No. PCT/US2011/058282
International Filing Date 28.10.2011
IPC
H01L 23/58 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
58Structural electrical arrangements for semiconductor devices not otherwise provided for
CPC
H01L 2224/49107
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
47Structure, shape, material or disposition of the wire connectors after the connecting process
49of a plurality of wire connectors
491Disposition
49105Connecting at different heights
49107on the semiconductor or solid-state body
H01L 29/452
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
40Electrodes ; ; Multistep manufacturing processes therefor
43characterised by the materials of which they are formed
45Ohmic electrodes
452on AIII-BV compounds
H01L 2933/0016
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2933Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
0008Processes
0016relating to electrodes
H01L 33/22
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
20with a particular shape, e.g. curved or truncated substrate
22Roughened surfaces, e.g. at the interface between epitaxial layers
H01L 33/32
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
26Materials of the light emitting region
30containing only elements of group III and group V of the periodic system
32containing nitrogen
H01L 33/38
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
36characterised by the electrodes
38with a particular shape
Applicants
  • THE REGENTS OF THE UNIVERSITY OF CALIFORNIA [US]/[US] (AllExceptUS)
  • CHUNG, Roy, B. [US]/[US] (UsOnly)
  • CHEN, Hung, Tse (UsOnly)
  • PAN, Chih-Chien (UsOnly)
  • SPECK, James, S. [US]/[US] (UsOnly)
  • DENBAARS, Steven, P. [US]/[US] (UsOnly)
  • NAKAMURA, Shuji [US]/[US] (UsOnly)
Inventors
  • CHUNG, Roy, B.
  • CHEN, Hung, Tse
  • PAN, Chih-Chien
  • SPECK, James, S.
  • DENBAARS, Steven, P.
  • NAKAMURA, Shuji
Agents
  • SERAPIGLIA, Gerard, B.
Priority Data
61/407,78228.10.2010US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) METHOD FOR FABRICATION OF (AL, IN, GA) NITRIDE BASED VERTICAL LIGHT EMITTING DIODES WITH ENHANCED CURRENT SPREADING OF N-TYPE ELECTRODE
(FR) PROCÉDÉ DE FABRICATION DE DIODES ÉLECTROLUMINESCENTES VERTICALES À BASE DE NITRURE (AL, IN, GA) AU MOYEN D'UN ÉTALEMENT D'INTENSITÉ DE COURANT AMÉLIORÉ D'UNE ÉLECTRODE DE TYPE N
Abstract
(EN)
A method of fabricating an (Al, In, Ga)N based optoelectronic device, comprising forming an n-type ohmic contact on an (Al, In, Ga)N surface of the device, wherein the surface comprises an Nitrogen face (N-face) and a N-rich face of the (Al, In, Ga)N, the n-type contact is on the N-face and the N-rich face, and the current spreading of the n-type ohmic contact is enhanced by a combination of a lower and a higher contact resistance on the surface.
(FR)
La présente invention concerne un procédé de fabrication d'un dispositif optoélectronique à base de (Al, In, Ga)N, consistant à former un contact ohmique de type n sur une surface (Al, In, Ga)N du dispositif, la surface comprenant une face azote (face N) et une face riche en N de (Al, In, Ga)N, le contact de type n se situant sur la face N et sur la face riche en N, et l'étalement d'intensité de courant du contact ohmique de type n étant amélioré par une combinaison d'une résistance de contact inférieure et d'une résistance de contact supérieure sur la surface.
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