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1. WO2012058386 - METHOD FOR REDUCTION OF EFFICIENCY DROOP USING AN (A1,In,Ga)N/A1(x)In(1-x)N SUPERLATTICE ELECTRON BLOCKING LAYER IN NITRIDE BASED LIGHT EMITTING DIODES

Publication Number WO/2012/058386
Publication Date 03.05.2012
International Application No. PCT/US2011/058016
International Filing Date 27.10.2011
IPC
H01L 29/06 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02Semiconductor bodies
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
CPC
H01L 33/06
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
04with a quantum effect structure or superlattice, e.g. tunnel junction
06within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L 33/32
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
26Materials of the light emitting region
30containing only elements of group III and group V of the periodic system
32containing nitrogen
Applicants
  • THE REGENTS OF THE UNIVERSITY OF CALIFORNIA [US]/[US] (AllExceptUS)
  • CHUNG, Roy, B. [US]/[US] (UsOnly)
  • HAN, Changseok [KR]/[KR] (UsOnly)
  • DENBAARS, Steven, P. [US]/[US] (UsOnly)
  • SPECK, James, S. [US]/[US] (UsOnly)
  • NAKAMURA, Shuji [US]/[US] (UsOnly)
Inventors
  • CHUNG, Roy, B.
  • HAN, Changseok
  • DENBAARS, Steven, P.
  • SPECK, James, S.
  • NAKAMURA, Shuji
Agents
  • GATES, George, H.
Priority Data
61/407,36227.10.2010US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) METHOD FOR REDUCTION OF EFFICIENCY DROOP USING AN (A1,In,Ga)N/A1(x)In(1-x)N SUPERLATTICE ELECTRON BLOCKING LAYER IN NITRIDE BASED LIGHT EMITTING DIODES
(FR) PROCÉDÉ POUR RÉDUIRE LA BAISSE DE RENDEMENT AU MOYEN D'UNE COUCHE DE SUPER-RÉSEAU EN (AL,IN,GA)N/AL(X)IN(1-X)N BLOQUANT LES ÉLECTRONS DANS DES DIODES ÉLECTROLUMINESCENTES À BASE DE NITRURE
Abstract
(EN)
A method for reduction of efficiency droop using an (Al, In, Ga)N/AlxIn1-xN superlattice electron blocking layer (SL-EBL) in nitride based light emitting diodes.
(FR)
L'invention concerne un procédé pour réduire la baisse de rendement par l'utilisation d'une couche super-réseau en (Al, In, Ga)N/AlxIn1-xN bloquant les électrons (SL-EBL) dans des diodes électroluminescentes à base de nitrure.
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