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1. WO2012058264 - LIMITING STRAIN RELAXATION IN III-NITRIDE HETEROSTRUCTURES BY SUBSTRATE AND EPITAXIAL LAYER PATTERNING

Publication Number WO/2012/058264
Publication Date 03.05.2012
International Application No. PCT/US2011/057811
International Filing Date 26.10.2011
IPC
H01S 5/00 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
CPC
B82Y 20/00
BPERFORMING OPERATIONS; TRANSPORTING
82NANOTECHNOLOGY
YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
20Nanooptics, e.g. quantum optics or photonic crystals
H01L 29/045
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
04characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
045by their particular orientation of crystalline planes
H01L 29/2003
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
12characterised by the materials of which they are formed
20including, apart from doping materials or other impurities, only AIIIBV compounds
2003Nitride compounds
H01L 29/7787
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
778with two-dimensional charge carrier gas channel, e.g. HEMT ; ; with two-dimensional charge-carrier layer formed at a heterojunction interface
7786with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
7787with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
H01L 33/0075
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
005Processes
0062for devices with an active region comprising only III-V compounds
0075comprising nitride compounds
H01L 33/16
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
16with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
Applicants
  • THE REGENTS OF THE UNIVERSITY OF CALIFORNIA [US]/[US] (AllExceptUS)
  • SPECK, James S. [US]/[US] (UsOnly)
  • TYAGI, Anurag [IN]/[US] (UsOnly)
  • DENBAARS, Steven P. [US]/[US] (UsOnly)
  • NAKAMURA, Shuji [US]/[US] (UsOnly)
Inventors
  • SPECK, James S.
  • TYAGI, Anurag
  • DENBAARS, Steven P.
  • NAKAMURA, Shuji
Agents
  • SERAPIGLIA, Gerard B.
Priority Data
61/406,87626.10.2010US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) LIMITING STRAIN RELAXATION IN III-NITRIDE HETEROSTRUCTURES BY SUBSTRATE AND EPITAXIAL LAYER PATTERNING
(FR) LIMITATION DU RELÂCHEMENT DES CONTRAINTES DANS DES HÉTÉROSTRUCTURES DE III-NITRURE PAR FAÇONNAGE DES COUCHES ÉPITAXIALES ET DU SUBSTRAT
Abstract
(EN)
A method of fabricating a substrate for a semipolar Ill-nitride device, comprising patterning and forming one or more mesas on a surface of a semipolar III- nitride substrate or epilayer, thereby forming a patterned surface of the semipolar III- nitride substrate or epilayer including each of the mesas with a dimension / along a direction of a threading dislocation glide, wherein the threading dislocation glide results from a Ill-nitride layer deposited heteroepitaxially and coherently on a non- patterned surface of the substrate or epilayer.
(FR)
Cette invention concerne un procédé de fabrication d'un substrat pour un dispositif de III-nitrure semi-polaire, ledit procédé consistant à façonner et former une ou plusieurs mesas sur la surface d'un substrat ou d'une épicouche de III-nitrure semi-polaire, ce qui forme une surface façonnée du substrat ou de l'épicouche de III-nitrure semi-polaire comprenant chacune des mesas ayant une certaine dimension sur une direction de mouvement des dislocations traversantes, ledit mouvement des dislocations traversantes provenant d'une couche de III-nitrure déposée par hétéroépitaxie et de manière cohérente sur une surface non façonnée du substrat ou de l'épicouche.
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