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1. WO2012058005 - APPARATUS HAVING IMPROVED SUBSTRATE TEMPERATURE UNIFORMITY USING DIRECT HEATING METHODS

Publication Number WO/2012/058005
Publication Date 03.05.2012
International Application No. PCT/US2011/055900
International Filing Date 12.10.2011
IPC
H01L 21/683 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
683for supporting or gripping
CPC
H01L 21/67115
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
67005Apparatus not specifically provided for elsewhere
67011Apparatus for manufacture or treatment
67098Apparatus for thermal treatment
67115mainly by radiation
H01L 21/68764
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
683for supporting or gripping
687using mechanical means, e.g. chucks, clamps or pinches
68714the wafers being placed on a susceptor, stage or support
68764characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
H01L 21/68771
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
683for supporting or gripping
687using mechanical means, e.g. chucks, clamps or pinches
68714the wafers being placed on a susceptor, stage or support
68771characterised by supporting more than one semiconductor substrate
Applicants
  • APPLIED MATERIALS, INC. [US]/[US] (AllExceptUS)
  • OLGADO, Donald J.K. [US]/[US] (UsOnly)
  • NGUYEN, Tuan Anh [CA]/[US] (UsOnly)
  • DUBOUST, Alain [US]/[US] (UsOnly)
Inventors
  • OLGADO, Donald J.K.
  • NGUYEN, Tuan Anh
  • DUBOUST, Alain
Agents
  • PATTERSON, B. Todd
Priority Data
61/407,85328.10.2010US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) APPARATUS HAVING IMPROVED SUBSTRATE TEMPERATURE UNIFORMITY USING DIRECT HEATING METHODS
(FR) APPAREIL OFFRANT UNE UNIFORMITÉ DE TEMPÉRATURE DE SUBSTRAT AMÉLIORÉE AU MOYEN DE PROCÉDÉS DE CHAUFFAGE DIRECT
Abstract
(EN)
Embodiments of the present invention generally relate to an apparatus and methods for uniformly heating substrates in a processing chamber. In one embodiment, an apparatus generally includes a substrate supporting structure that is able to help minimize the temperature variation across each of the substrates during thermal processing. In one configuration, a substrate supporting structure is adapted to selectively support a substrate carrier to control the heat lost from regions of each of the substrates disposed on the substrate carrier. The substrate supporting structure is thus configured to provide a uniform temperature profile across each of the plurality of substrates during processing.
(FR)
Des modes de réalisation de la présente invention concernent en général un appareil et des procédés destinés au chauffage uniforme de substrats dans une chambre de traitement. Dans un mode de réalisation, un appareil comprend en général une structure de support de substrat, capable d'aider à minimiser les variations de température sur chacun des substrats durant le traitement thermique. Dans une configuration, une structure de support de substrat est adaptée pour supporter de manière sélective un porte-substrat afin de réguler la chaleur perdue depuis des régions de chacun des substrats disposés sur le porte-substrat. La structure de support de substrat est ainsi configurée pour fournir un profil de température uniforme sur chacun des substrats durant le traitement.
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