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1. WO2012057963 - HIGH PURITY ALUMINUM COATING HARD ANODIZATION

Publication Number WO/2012/057963
Publication Date 03.05.2012
International Application No. PCT/US2011/054225
International Filing Date 30.09.2011
IPC
H01L 21/205 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
205using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 21/3065 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
3065Plasma etching; Reactive-ion etching
H05H 1/46 2006.01
HELECTRICITY
05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY- CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
1Generating plasma; Handling plasma
24Generating plasma
46using applied electromagnetic fields, e.g. high frequency or microwave energy
CPC
H01J 37/32495
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
32431Constructional details of the reactor
32458Vessel
32477characterised by the means for protecting vessels or internal parts, e.g. coatings
32495Means for protecting the vessel against plasma
Y10T 428/12611
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
10TECHNICAL SUBJECTS COVERED BY FORMER USPC
TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
428Stock material or miscellaneous articles
12All metal or with adjacent metals
12493Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
12535with additional, spatially distinct nonmetal component
12611Oxide-containing component
Applicants
  • APPLIED MATERIALS, INC. [US]/[US] (AllExceptUS)
  • OUYE, Alan Hiroshi [US]/[US] (UsOnly)
  • KOCH, Renee Marguerite [US]/[US] (UsOnly)
Inventors
  • OUYE, Alan Hiroshi
  • KOCH, Renee Marguerite
Agents
  • PATTERSON, B. Todd
Priority Data
61/407,90128.10.2010US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) HIGH PURITY ALUMINUM COATING HARD ANODIZATION
(FR) ANODISATION DURE D'UN REVÊTEMENT D'ALUMINIUM TRÈS PUR
Abstract
(EN)
The disclosure relates to a chamber component or a method for fabricating a chamber component for use in a plasma processing chamber apparatus. The chamber component includes a polished high purity aluminum coating and a hard anodized coating that is resistive to the plasma processing environment.
(FR)
L'invention concerne un composant de chambre, ou un procédé de fabrication d'un composant de chambre utilisable dans un appareil à chambre de traitement par plasma. Le composant de chambre comporte un revêtement poli à base d'aluminium très pur et un revêtement obtenu par anodisation dure qui est résistant à l'environnement de traitement par plasma.
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