Processing

Please wait...

PATENTSCOPE will be unavailable a few hours for maintenance reason on Saturday 31.10.2020 at 7:00 AM CET
Settings

Settings

Goto Application

1. WO2012057859 - LASER ASSISTED DIRECT BONDING

Publication Number WO/2012/057859
Publication Date 03.05.2012
International Application No. PCT/US2011/033990
International Filing Date 26.04.2011
IPC
H01L 21/18 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
CPC
H01L 21/187
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
185Joining of semiconductor bodies for junction formation
187by direct bonding
Y10T 428/13
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
10TECHNICAL SUBJECTS COVERED BY FORMER USPC
TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
428Stock material or miscellaneous articles
13Hollow or container type article [e.g., tube, vase, etc.]
Y10T 428/24942
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
10TECHNICAL SUBJECTS COVERED BY FORMER USPC
TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
428Stock material or miscellaneous articles
24Structurally defined web or sheet [e.g., overall dimension, etc.]
24942including components having same physical characteristic in differing degree
Y10T 428/31504
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
10TECHNICAL SUBJECTS COVERED BY FORMER USPC
TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
428Stock material or miscellaneous articles
31504Composite [nonstructural laminate]
Applicants
  • MEDTRONIC, INC. [US]/[US] (AllExceptUS)
  • DANZL, Ralph B. [US]/[US] (UsOnly)
  • RUBEN, David, A. [US]/[US] (UsOnly)
  • SANDLIN, Michael, S. [US]/[US] (UsOnly)
Inventors
  • DANZL, Ralph B.
  • RUBEN, David, A.
  • SANDLIN, Michael, S.
Agents
  • KELLY, Jason, D.
Priority Data
12/912,43326.10.2010US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) LASER ASSISTED DIRECT BONDING
(FR) LIAISON DIRECTE ASSISTÉE PAR LASER
Abstract
(EN)
Techniques are described for directly bonding different substrates together. In some examples, a technique includes placing a first surface of a first substrate in contact with a second surface of a second substrate to directly bond the first substrate to the second substrate at a contact location. The contact location is defined where at least a portion of the first surface of the first substrate contacts at least a portion of the second surface of the second substrate. The technique may also include directing a laser beam on at least a portion of the contact location to strengthen the direct bond between the first substrate and the second substrate. In this manner, a direct bond may be heated with localized laser energy to strengthen the direct bond. Localized laser energy may create a strong direct bond while minimizing thermal defects in regions proximate the direct bond.
(FR)
L'invention porte sur des techniques pour lier de manière directe différents substrats ensemble. Dans certains exemples, une technique comprend le placement d'une première surface d'un premier substrat en contact avec une seconde surface d'un second substrat pour lier directement le premier substrat au second substrat à un emplacement de contact. L'emplacement de contact est défini où au moins une partie de la première surface du premier substrat entre en contact avec au moins une partie de la seconde surface du second substrat. La technique peut également comprendre l'opération consistant à diriger un faisceau laser sur au moins une partie de l'emplacement de contact pour renforcer la liaison directe entre le premier substrat et le second substrat. De cette manière, une liaison directe peut être chauffée avec une énergie laser localisée pour renforcer la liaison directe. Une énergie laser localisée peut créer une liaison directe forte, tout en rendant les défauts thermiques minimums dans des régions à proximité de la liaison directe.
Latest bibliographic data on file with the International Bureau