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1. WO2012057494 - DYE-SENSITIZED SOLAR CELL INCLUDING A HIGHLY EFFICIENT LIGHT-SCATTERING LAYER

Publication Number WO/2012/057494
Publication Date 03.05.2012
International Application No. PCT/KR2011/007973
International Filing Date 25.10.2011
IPC
H01L 31/042 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic conversion devices
042PV modules or arrays of single PV cells
H01L 31/0224 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0224Electrodes
CPC
H01G 9/209
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
9Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
20Light-sensitive devices
209Light trapping arrangements
H01L 31/056
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic [PV] conversion devices
054Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
056the light-reflecting means being of the back surface reflector [BSR] type
Y02E 10/52
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
10Energy generation through renewable energy sources
50Photovoltaic [PV] energy
52PV systems with concentrators
Y02E 10/542
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
10Energy generation through renewable energy sources
50Photovoltaic [PV] energy
54Material technologies
542Dye sensitized solar cells
Applicants
  • 주식회사 동진쎄미켐 DONGJIN SEMICHEM CO., LTD. [KR]/[KR] (AllExceptUS)
  • 안현철 AN, Hyun Cheol [KR]/[KR] (UsOnly)
  • 배호기 BAE, Ho Gi [KR]/[KR] (UsOnly)
  • 김종복 KIM, Jong Bok [KR]/[KR] (UsOnly)
  • 윤정현 YOON, Jung-Hyun [KR]/[KR] (UsOnly)
  • 박찬석 PARK, Chan Seok [KR]/[KR] (UsOnly)
Inventors
  • 안현철 AN, Hyun Cheol
  • 배호기 BAE, Ho Gi
  • 김종복 KIM, Jong Bok
  • 윤정현 YOON, Jung-Hyun
  • 박찬석 PARK, Chan Seok
Agents
  • 박명식 PARK, Myoung Sik
Priority Data
10-2010-010450326.10.2010KR
10-2011-010842724.10.2011KR
Publication Language Korean (KO)
Filing Language Korean (KO)
Designated States
Title
(EN) DYE-SENSITIZED SOLAR CELL INCLUDING A HIGHLY EFFICIENT LIGHT-SCATTERING LAYER
(FR) CELLULE SOLAIRE SENSIBILISÉE AUX COLORANTS COMPRENANT UNE COUCHE DE DIFFUSION DE LUMIÈRE À HAUTE EFFICACITÉ
(KO) 고효율 광산란층을 구비한 염료감응 태양전지
Abstract
(EN)
The present invention relates to a dye-sensitized solar cell including a highly-efficient light-scattering layer, and more particularly, to a structure of a light-scattering layer that does not reduce an effective generation area and increases photoelectric conversion efficiency, and to a dye-sensitized solar cell including the light-scattering layer. According to the dye-sensitized solar cell, which includes a transparent substrate, a conductive substrate, a multilayer light electrode layer including at least two layers on the conductive substrate, a light-scattering layer as the uppermost layer in the multilayer light electrode layer, an electrolyte layer, a catalyst electrode layer, and a supporting substrate, and which is sealed with a sealing material, when the light-scattering layer contacts the outer top surface of the lowermost light electrode layer contacting the conductive substrate and covers the entire remaining light electrode layer, since light that is incident on the transparent substrate and then penetrates through a semiconductor particle layer without a current generation process is reflected by the light-scattering layer, and then performs a current generation process again by reentering the semiconductor particle layer, a photoelectric conversion rate may be increased. Since the lateral side of the lowermost semiconductor particle layer, which is placed closest to the conductive substrate, is not covered, an effective generation area is not reduced, and the effect of the light-scattering layer is maximized, such that generation efficiency may be increased.
(FR)
La présente invention concerne une cellule solaire sensibilisée aux colorants comprenant une couche de diffusion de la lumière à haute efficacité, et plus particulièrement, une structure d'une couche de diffusion de lumière qui ne réduit pas l'aire de génération efficace et augmente le rendement de conversion photoélectrique, et une cellule solaire sensibilisée aux colorants comprenant la couche de diffusion de la lumière. Dans la cellule solaire sensibilisée aux colorants, qui comprend un substrat transparent, un substrat conducteur, une couche d'électrode de lumière multicouche comprenant au moins deux couches sur le substrat conducteur, une couche de diffusion de la lumière servant de couche supérieure dans la couche d'électrode de lumière multicouche, une couche d'électrolyte, une couche d'électrode de catalyseur, et un substrat de support, et qui est scellée par un matériau étanche, quand la couche de diffusion de la lumière entre en contact avec la surface supérieure extérieure de la couche d'électrode de lumière inférieure en contact avec le substrat conducteur et recouvre tout le reste de la couche d'électrode de lumière, puisque la lumière qui est incidente sur le substrat transparent puis pénètre à travers une couche de particules semi-conductrices sans processus de génération de courant est réfléchie par la couche de diffusion de la lumière, puis effectue à nouveau un processus de génération de courant en réentrant dans la couche de particules semi-conductrices, un taux de conversion photoélectrique peut être accru. Puisque la face latérale de la couche de particules semi-conductrices inférieure, qui est placée au plus près du substrat conducteur, n'est pas couverte, une aire de génération efficace n'est pas réduite, et l'effet de la couche de diffusion de la lumière est maximisé, de sorte que le rendement de génération peut être accru.
(KO)
본 발명은 고효율 광산란층을 구비한 염료감응 태양전지에 관한 것으로 보다 상세하게는 유효발전면적을 감소시키지 않으면서도 광전변환효율을 증대시킬 수 있는 광산란층의 구조와 그러한 광산란층을 구비한 염료감응 태양전지에 관한 것이다. 투광성 기판, 도전성 기판, 도전성 기판위에 위치하는 이층이상의 다층 광전극층, 다층 광전극층 중 최상부에 위치한 광산란층, 전해질층, 촉매전극층, 지지기판으로 형성되고 봉지재로 밀봉되는 염료감응태양전지에 있어서, 광산란층은 도전성 기판과 접하고 있는 최하위 광전극층의 상단면 외곽과 접하면서 나머지 광전극층 전체를 피복하도록 구성하는 경우,투광성 기판쪽으로 입사하여 전류생성과정을 거치지 않고 반도체 미립자층을 통과한 빛이 광산란층에서 반사되어 반도체 미립자층으로 재입사하여 전류 생성 과정을 다시 수행하게 되므로, 광전변환율을 증가시킬 수 있고, 도전성 기판에서 가장 가까운 곳에 위치한 최하층 반도체 미립자 층의 옆면을 감싸지 않았으므로, 유효발전면적이 줄어들지 않으면서도 광산란층의 효과를 최대한 나타내어 발전 효율을 증대시킬 수 있는 효과가 있다.
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