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1. WO2012056915 - ELECTROSTATIC CHUCK

Publication Number WO/2012/056915
Publication Date 03.05.2012
International Application No. PCT/JP2011/073768
International Filing Date 11.10.2011
IPC
C04B 35/581 2006.01
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04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
BLIME; MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
35Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
515based on non-oxides
58based on borides, nitrides or silicides
581based on aluminium nitride
C04B 35/04 2006.01
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04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
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35Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
01based on oxides
03based on magnesium oxide, calcium oxide or oxide mixtures derived from dolomite
04based on magnesium oxide
H01L 21/3065 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
3065Plasma etching; Reactive-ion etching
H01L 21/31 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
CPC
B32B 18/00
BPERFORMING OPERATIONS; TRANSPORTING
32LAYERED PRODUCTS
BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
18Layered products essentially comprising ceramics, e.g. refractory products
C04B 2235/3206
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2235Aspects relating to ceramic starting mixtures or sintered ceramic products
02Composition of constituents of the starting material or of secondary phases of the final product
30Constituents and secondary phases not being of a fibrous nature
32Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
3205Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
3206Magnesium oxides or oxide-forming salts thereof
C04B 2235/3217
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2235Aspects relating to ceramic starting mixtures or sintered ceramic products
02Composition of constituents of the starting material or of secondary phases of the final product
30Constituents and secondary phases not being of a fibrous nature
32Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
3217Aluminum oxide or oxide forming salts thereof, e.g. bauxite, alpha-alumina
C04B 2235/3222
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2235Aspects relating to ceramic starting mixtures or sintered ceramic products
02Composition of constituents of the starting material or of secondary phases of the final product
30Constituents and secondary phases not being of a fibrous nature
32Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
3217Aluminum oxide or oxide forming salts thereof, e.g. bauxite, alpha-alumina
3222Aluminates other than alumino-silicates, e.g. spinel (MgAl2O4)
C04B 2235/3225
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2235Aspects relating to ceramic starting mixtures or sintered ceramic products
02Composition of constituents of the starting material or of secondary phases of the final product
30Constituents and secondary phases not being of a fibrous nature
32Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
3224Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
3225Yttrium oxide or oxide-forming salts thereof
C04B 2235/3865
CCHEMISTRY; METALLURGY
04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE
2235Aspects relating to ceramic starting mixtures or sintered ceramic products
02Composition of constituents of the starting material or of secondary phases of the final product
30Constituents and secondary phases not being of a fibrous nature
38Non-oxide ceramic constituents or additives
3852Nitrides, e.g. oxynitrides, carbonitrides, oxycarbonitrides, lithium nitride, magnesium nitride
3865Aluminium nitrides
Applicants
  • 日本碍子株式会社 NGK Insulators, Ltd. [JP]/[JP] (AllExceptUS)
  • 相川 賢一郎 AIKAWA, Kenichiro [JP]/[JP] (UsOnly)
  • 渡邊 守道 WATANABE, Morimichi [JP]/[JP] (UsOnly)
  • 神藤 明日美 JINDO, Asumi [JP]/[JP] (UsOnly)
  • 勝田 祐司 KATSUDA, Yuji [JP]/[JP] (UsOnly)
  • 佐藤 洋介 SATO, Yosuke [JP]/[JP] (UsOnly)
  • 磯田 佳範 ISODA, Yoshinori [JP]/[JP] (UsOnly)
Inventors
  • 相川 賢一郎 AIKAWA, Kenichiro
  • 渡邊 守道 WATANABE, Morimichi
  • 神藤 明日美 JINDO, Asumi
  • 勝田 祐司 KATSUDA, Yuji
  • 佐藤 洋介 SATO, Yosuke
  • 磯田 佳範 ISODA, Yoshinori
Agents
  • 細田 益稔 HOSODA, Masutoshi
Priority Data
2010-23900025.10.2010JP
2011-13531217.06.2011JP
PCT/JP2011/06947929.08.2011JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) ELECTROSTATIC CHUCK
(FR) SUPPORT ÉLECTROSTATIQUE
(JA) 静電チャック
Abstract
(EN)
An electrostatic chuck (1A) comprises a susceptor (11A) having an attracting surface (11a) that attracts and holds semiconductors, and an electrostatic chuck electrode (4) that is embedded within this susceptor. The susceptor (11A) is provided with a plate-shaped main body (3) and a surface corrosion-resistant layer (2) that faces the attracting surface (11a). The surface corrosion-resistant layer (2) is made from a ceramic material having magnesium, aluminum, oxygen and nitrogen as main ingredients, this ceramic material having as a main phase a magnesium-aluminum oxynitride phase which manifests a XRD peak when using CuK alpha radiation of at least 2θ = 47 to 50°.
(FR)
L'invention porte sur un support électrostatique (1A) comprenant un suscepteur (11A) ayant une surface d'attraction (11a) qui attire et retient des semi-conducteurs et une électrode de support électrostatique (4) qui est enchâssée dans ce suscepteur. Le suscepteur (11A) est doté d'un corps principal en forme de plaque (3) et d'une couche de surface résistante à la corrosion (2) qui fait face à la surface d'attraction (11a). La couche de surface résistante à la corrosion (2) est fabriquée à partir d'un matériau céramique comprenant du magnésium, de l'aluminium, de l'oxygène et de l'azote en tant qu'ingrédients principaux, ce matériau céramique ayant comme phase principale une phase d'oxynitrure de magnésium-aluminium qui présente un pic en diffraction des rayons X lors de l'utilisation de la raie CuK-alpha d'au moins 2θ = 47 à 50°.
(JA)
静電チャック1Aは、半導体を吸着する吸着面11aを有するサセプター11Aと、このサセプター内に埋設されている静電チャック電極4とを備える。サセプター11Aが、板状本体部3と、吸着面11aに面する表面耐食層2とを備えている。表面耐食層2が、マグネシウム、アルミニウム、酸素及び窒素を主成分とするセラミックス材料からなり、このセラミックス材料が、CuKα線を用いたときのXRDピークが少なくとも2θ=47~50°に現れるマグネシウム-アルミニウム酸窒化物相を主相とする。
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