Processing

Please wait...

PATENTSCOPE will be unavailable a few hours for maintenance reason on Saturday 31.10.2020 at 7:00 AM CET
Settings

Settings

Goto Application

1. WO2012056121 - PROCESS FOR MANUFACTURING COLLOIDAL NANOSHEETS BY LATERAL GROWTH OF NANOCRYSTALS

Publication Number WO/2012/056121
Publication Date 03.05.2012
International Application No. PCT/FR2011/000570
International Filing Date 24.10.2011
IPC
C30B 7/08 2006.01
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
7Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
08by cooling of the solution
C30B 29/48 2006.01
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10Inorganic compounds or compositions
46Sulfur-, selenium- or tellurium-containing compounds
48AIIBVI compounds
C30B 29/64 2006.01
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
60characterised by shape
64Flat crystals, e.g. plates, strips or discs
CPC
B82Y 30/00
BPERFORMING OPERATIONS; TRANSPORTING
82NANOTECHNOLOGY
YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
30Nanotechnology for materials or surface science, e.g. nanocomposites
B82Y 40/00
BPERFORMING OPERATIONS; TRANSPORTING
82NANOTECHNOLOGY
YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
40Manufacture or treatment of nanostructures
C30B 29/16
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10Inorganic compounds or compositions
16Oxides
C30B 29/46
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10Inorganic compounds or compositions
46Sulfur-, selenium- or tellurium-containing compounds
C30B 29/48
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10Inorganic compounds or compositions
46Sulfur-, selenium- or tellurium-containing compounds
48AIIBVI compounds ; wherein A is Zn, Cd or Hg, and B is S, Se or Te
C30B 29/60
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
60characterised by shape
Applicants
  • SOLARWELL [FR]/[FR] (AllExceptUS)
  • MAHLER, Benoit [FR]/[FR] (UsOnly)
  • ITHURRIA, Sandrine [FR]/[FR] (UsOnly)
Inventors
  • MAHLER, Benoit
  • ITHURRIA, Sandrine
Common Representative
  • MAHLER, Benoit [FR]/[FR]
Priority Data
100417525.10.2010FR
Publication Language French (FR)
Filing Language French (FR)
Designated States
Title
(EN) PROCESS FOR MANUFACTURING COLLOIDAL NANOSHEETS BY LATERAL GROWTH OF NANOCRYSTALS
(FR) PROCÉDÉ DE FABRICATION DE NANOFEUILLETS COLLOÏDAUX PAR CROISSANCE LATÉRALE DE NANOCRISTAUX
Abstract
(EN)
A process for manufacturing a colloidal nanosheet by lateral growth, on an initial colloidal nanocrystal, of a crystalline semiconductor material represented by the formula MnXy, M being a transition metal and X a chalcogen, the process comprising the following steps: the preparation of a first organic solution that is not coordinating or is weakly coordinating, constituting a synthesis solvent and containing said initial colloidal nanocrystal; the preparation of a second organic solution containing precursors of M and of X and additionally containing an acetate salt; and the gradual introduction, over a predetermined duration, of a predetermined quantity of the second solution into a predetermined quantity of the first solution, at a predetermined temperature T for the growth of the nanosheet. The use of the material obtained is also presented.
(FR)
Un procédé de fabrication d'un nanofeuillet colloïdal par croissance latérale sur un nanocristal colloïdal initial, d'un matériau cristallin semiconducteur représenté par la formule MnXy M étant un métal de transition et X un chalcogène, le procédé comprenant les étapes suivantes: la préparation d'une première solution organique non ou faiblement coordinante constituant un solvant de synthèse et contenant ledit nanocristal colloïdal initial; la préparation d'une deuxième solution organique contenant des précurseurs de M et de X et contenant en outre un sel d'acétate; et l'introduction progressive pendant une durée prédéterminée d'une quantité prédéterminée de la deuxième solution dans une quantité prédéterminée de la première solution, à une température prédéterminée T pour la croissance du nanofeuillet L'utilisation du matériau obtenu est également présentée.
Latest bibliographic data on file with the International Bureau