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1. WO2012055871 - A METHOD FOR PRODUCING A BACK-CONTACT BACK-JUNCTION SILICON SOLAR CELL

Publication Number WO/2012/055871
Publication Date 03.05.2012
International Application No. PCT/EP2011/068665
International Filing Date 25.10.2011
IPC
H01L 31/0224 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0224Electrodes
CPC
C23C 14/046
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
04Coating on selected surface areas, e.g. using masks
046Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
H01L 31/022425
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0224Electrodes
022408for devices characterised by at least one potential jump barrier or surface barrier
022425for solar cells
H01L 31/022441
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0224Electrodes
022408for devices characterised by at least one potential jump barrier or surface barrier
022425for solar cells
022441Electrode arrangements specially adapted for back-contact solar cells
Y02E 10/50
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
10Energy generation through renewable energy sources
50Photovoltaic [PV] energy
Applicants
  • INSTITUTT FOR ENERGITEKNIKK [NO]/[NO] (AllExceptUS)
  • MANGERSNES, Krister [NO]/[NO] (UsOnly)
  • FOSS, Sean, Erik [NO]/[NO] (UsOnly)
Inventors
  • MANGERSNES, Krister
  • FOSS, Sean, Erik
Agents
  • VALEA AB
Priority Data
2010151127.10.2010NO
61/407,17127.10.2010US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) A METHOD FOR PRODUCING A BACK-CONTACT BACK-JUNCTION SILICON SOLAR CELL
(FR) PROCÉDÉ DE FABRICATION D'UNE CELLULE SOLAIRE
Abstract
(EN)
A device, and a method and apparatus for producing the device, having a surface layer (4) of a selected material in a predetermined pattern on a surface of a substrate (1). The substrate has a groove (7) or a ridge arranged in said substrate surface, said groove (7) or ridge having a bottom (3) or top (2) face, respectively, and at least one side face (8) sloping with respect to said bottom face (3) or said top face (2). The surface layer (4,5) is deposited on a part of said substrate (1) comprising said groove (7) or ridge by vacuum chamber sputtering of said selected material from a sputtering source (30) whilst moving said substrate (1) past said sputtering source (30) in a direction substantially perpendicular to a direction (40) of a main lobe (20) of sputtering from said sputtering source (30) and with a normal to the substrate surface (1) substantially in a predefined angle with said main lobe (20) direction. After depositing said surface layer, by uniformly etching away surface layer material deposited on said substrate by sputtering until at least a substantial part of said side face (8) is free of said surface layer (5), the predetermined pattern becomes defined substantially by the bottom face (3) of the groove or by the top face (2) of the ridge.
(FR)
La présente invention concerne un dispositif, ainsi qu'un procédé et un appareil de fabrication dudit dispositif. Ledit dispositif comporte une couche de surface (4, 5) d'un matériau sélectionné dans une configuration prédéterminée sur une surface d'un substrat (1). Le substrat comporte une rainure (7) ou une arête agencée dans ladite surface de substrat, ladite rainure (7) ou arête possédant une face inférieure (3) ou supérieure (2), respectivement, et au moins une face latérale (8) inclinée par rapport à ladite face inférieure (3) ou ladite face supérieure (2). La couche de surface (4, 5) est déposée sur une partie dudit substrat (1) qui comprend ladite rainure (7) ou arête par pulvérisation à chambre à vide dudit matériau sélectionné à partir d'une source de pulvérisation (30) tout en déplaçant ledit substrat (1) devant ladite source de pulvérisation (30) dans une direction sensiblement perpendiculaire à une direction (40) d'un lobe principal (20) de pulvérisation à partir de ladite source de pulvérisation (30) et avec une normale à la surface de substrat (1) à un angle sensiblement prédéfini par rapport à la direction dudit lobe principal (20). En éliminant uniformément par gravure le matériau de couche de surface déposé sur ledit substrat par ladite pulvérisation jusqu'à ce qu'au moins une partie importante de ladite face latérale (8) soit dépourvue de ladite couche de surface (5), la configuration prédéterminée est définie sensiblement par la face inférieure (3) de la rainure ou par la face supérieure (2) de l'arête.
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