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1. WO2012055196 - GRAPHENE DEVICE AND MANUFACTURING METHOD THEREOF

Publication Number WO/2012/055196
Publication Date 03.05.2012
International Application No. PCT/CN2011/071194
International Filing Date 23.02.2011
IPC
H01L 29/78 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
H01L 29/16 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02Semiconductor bodies
12characterised by the materials of which they are formed
16including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
H01L 21/336 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334Multistep processes for the manufacture of devices of the unipolar type
335Field-effect transistors
336with an insulated gate
CPC
H01L 29/1606
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
12characterised by the materials of which they are formed
16including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
1606Graphene
H01L 29/66045
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
66007Multistep manufacturing processes
66015of devices having a semiconductor body comprising semiconducting carbon, e.g. diamond, diamond-like carbon, graphene
66037the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
66045Field-effect transistors
H01L 29/66742
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
66007Multistep manufacturing processes
66075of devices having semiconductor bodies comprising group 14 or group 13/15 materials
66227the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
66409Unipolar field-effect transistors
66477with an insulated gate, i.e. MISFET
66742Thin film unipolar transistors
H01L 29/78618
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
78with field effect produced by an insulated gate
786Thin film transistors, ; i.e. transistors with a channel being at least partly a thin film
78606with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
78618characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
H01L 29/78684
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
78with field effect produced by an insulated gate
786Thin film transistors, ; i.e. transistors with a channel being at least partly a thin film
78684having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys
Applicants
  • 中国科学院微电子研究所 INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES [CN]/[CN] (AllExceptUS)
  • 梁擎擎 LIANG, Qingqing [CN]/[CN] (UsOnly)
  • 金智 JIN, Zhi [CN]/[CN] (UsOnly)
  • 王文武 WANG, Wenwu [CN]/[CN] (UsOnly)
  • 钟汇才 ZHONG, Huicai [CN]/[CN] (UsOnly)
  • 刘新宇 LIU, Xinyu [CN]/[CN] (UsOnly)
  • 朱慧珑 ZHU, Huilong [US]/[US] (UsOnly)
Inventors
  • 梁擎擎 LIANG, Qingqing
  • 金智 JIN, Zhi
  • 王文武 WANG, Wenwu
  • 钟汇才 ZHONG, Huicai
  • 刘新宇 LIU, Xinyu
  • 朱慧珑 ZHU, Huilong
Agents
  • 北京集佳知识产权代理有限公司 UNITALEN ATTORNEYS AT LAW
Priority Data
201010532003.129.10.2010CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) GRAPHENE DEVICE AND MANUFACTURING METHOD THEREOF
(FR) DISPOSITIF EN GRAPHÈNE ET PROCÉDÉ DE FABRICATION CORRESPONDANT
(ZH) 一种石墨烯器件及其制造方法
Abstract
(EN)
A graphene device structure and a manufacturing method thereof are provided. The device comprises a graphene layer, a gate region formed on the graphene layer, and a semiconductor doped region formed on one side of the gate region and contacted with the graphene layer, wherein the semiconductor doped region is as the drain region of the device structure, and the graphene layer formed on the other side of the gate region as the source region of the device structure. The on-off ratio of the graphene device is improved by the semiconductor doped region without neither increasing the band gap of the graphene material nor sacrificing the carrier mobility of the material and the device speed, thus providing the graphene material with a better application in CMOS devices.
(FR)
L'invention concerne une structure de dispositif en graphène et un procédé de fabrication correspondant. Le dispositif comprend une couche de graphène, une région de grille formée sur la couche de graphène et une région semi-conductrice dopée formée sur un côté de la région de grille et qui se trouve au contact de la couche de graphène. La région semi-conductrice dopée joue le rôle de région de drain de la structure de dispositif et la couche de graphène formée de l'autre côté de la région de grille joue le rôle de région de source de la structure de dispositif. Le rapport marche/arrêt du dispositif en graphène est amélioré par la région semi-conductrice dopée sans qu'il soit nécessaire d'augmenter la bande interdite du graphène ni de sacrifier la mobilité des porteurs dans le matériau et la vitesse du dispositif, donnant ainsi au graphène une meilleure application dans les dispositifs CMOS.
(ZH)
一种石墨烯器件结构及其制造方法,所述器件结构包括:石墨烯层;形成于石墨烯层上的栅极区;形成于栅极区一侧的、与石墨烯层相接触的半导体掺杂区;其中所述半导体掺杂区为所述器件结构的漏极区,位于所述栅极区另一侧的石墨烯层为所述器件结构的源极区。通过所述半导体掺杂区来提高石墨烯器件的开关比,而不必增大石墨烯材料本身的带隙亦即不牺牲材料的迁移率和器件的速度,从而使石墨烯材料在CMOS器件中的得到更好的应用。
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