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Machine translation
1. (WO2012054123) HEMT WITH FLOATING AND GROUNDED SUBSTRATE REGIONS
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2012/054123    International Application No.:    PCT/US2011/046066
Publication Date: 26.04.2012 International Filing Date: 31.07.2011
IPC:
H01L 29/778 (2006.01), H01L 21/335 (2006.01)
Applicants: NATIONAL SEMICONDUCTOR CORPORATION [US/US]; 2900 Semiconductor Drive M/S D3-579 Santa Clara, CA 95051-8090 (US) (For All Designated States Except US)
Inventors: BAHL, Sandeep; (US).
BULUCEA, Constantin; (US)
Agent: PICKERING, Mark; P.O. Box 151440 San Rafael, CA 94915-1440 (US)
Priority Data:
12/908,514 20.10.2010 US
Title (EN) HEMT WITH FLOATING AND GROUNDED SUBSTRATE REGIONS
(FR) TRANSISTOR HEMT COMPRENANT DES RÉGIONS DE SUBSTRAT MISES À LA MASSE
Abstract: front page image
(EN)The Si substrate (210, 810, 1410) of a group III-N HEMT (200, 800, 1400) is formed in layers that define a p-n junction which electrically isolates an upper region (214, 816, 1414) of the Si substrate (210, 810, 1410) from a lower region (212, 812, 1412) of the Si substrate (210, 810, 1410). As a result, the upper region (214, 816, 1414) of the Si substrate (210, 810, 1410) can electrically float, thereby obtaining a full buffer breakdown voltage, while the lower region (212, 812, 1412) of the Si substrate (210, 810, 1410) can be attached to a package by way of a conductive epoxy, thereby significantly improving the thermal conductivity of the group III-N HEMT (200, 800, 1400) and minimizing undesirable floating-voltage regions.
(FR)Dans la présente invention, le substrat Si (210, 810, 1410) d'un transistor HEMT de groupe III-N (200, 800, 1400) est formé en couches qui définissent une jonction p-n qui isole électriquement la région supérieure (214, 816, 1414) du substrat Si (210, 810, 1410) d'une couche inférieure (212, 812, 1412) du substrat Si (210, 810, 1410). En conséquence, la région supérieure (214, 816, 1414) du substrat Si (210, 810, 1410) peut flotter électriquement, ceci assurant une tension de claquage complète du tampon, tandis que la région inférieure (212, 812, 1412) du substrat Si (210, 810, 1410) peut être fixée à un boîtier au moyen d'un époxyde conducteur, ce qui améliore significativement la conductivité thermique du transistor HEMT du groupe III-N (200, 800, 1400) et minimise les régions de tension flottante indésirables.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)