WIPO logo
Mobile | Deutsch | Español | Français | 日本語 | 한국어 | Português | Русский | 中文 | العربية |
PATENTSCOPE

Search International and National Patent Collections
World Intellectual Property Organization
Search
 
Browse
 
Translate
 
Options
 
News
 
Login
 
Help
 
Machine translation
1. (WO2012054041) METAL-INSULATOR TRANSITION SWITCHING DEVICES
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2012/054041    International Application No.:    PCT/US2010/053549
Publication Date: 26.04.2012 International Filing Date: 21.10.2010
IPC:
H01L 21/336 (2006.01), H01L 29/78 (2006.01)
Applicants: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. [US/US]; 11445 Compaq Center Drive W. Houston, Texas 77070 (US) (For All Designated States Except US).
PICKETT, Matthew D. [US/US]; (US) (For US Only).
KUEKES, Philip J. [US/US]; (US) (For US Only).
WILLIAMS, R. Stanley [US/US]; (US) (For US Only).
PERNER, Frederick [US/US]; (US) (For US Only).
WU, Wei [CN/US]; (US) (For US Only).
BRATKOVSKI, Alexandre M. [US/US]; (US) (For US Only)
Inventors: PICKETT, Matthew D.; (US).
KUEKES, Philip J.; (US).
WILLIAMS, R. Stanley; (US).
PERNER, Frederick; (US).
WU, Wei; (US).
BRATKOVSKI, Alexandre M.; (US)
Agent: COLLINS, David; Hewlett-Packard Company Intellectual Property Administration 3404 E. Harmony Road Mail Stop 35 Fort Collins, Colorado 80528 (US)
Priority Data:
Title (EN) METAL-INSULATOR TRANSITION SWITCHING DEVICES
(FR) DISPOSITIFS DE COMMUTATION À TRANSITION MÉTAL-ISOLANT
Abstract: front page image
(EN)A metal-insulator transition switching device (100) includes a first electrode (120) and a second electrode (125). A channel region (115) which includes a bulk metal-insulator transition material separates the first electrode (120) and the second electrode (125). A method for forming a metal-insulator transition switching device (200) includes depositing a layer of bulk metal-insulator transition material (245) in between a first electrode (220) and a second electrode (225) to form a channel region (115) and forming a gate electrode (210) operatively connected to the channel region (115).
(FR)La présente invention a trait à un dispositif de commutation à transition métal-isolant (100) qui inclut une première électrode (120) et une seconde électrode (125). Une zone de canal (115) qui inclut un matériau de transition métal-isolant en vrac sépare la première électrode (120) et la seconde électrode (125). Un procédé permettant de former un dispositif de commutation à transition métal-isolant (200) inclut les étapes consistant à déposer une couche de matériau de transition métal-isolant en vrac (245) entre une première électrode (220) et une seconde électrode (225) de manière à former une zone de canal (115) et à former une électrode de grille (210) qui est reliée fonctionnement à la zone de canal (115).
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)