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1. (WO2012054021) METHOD OF FORMING SUBSTRATE FOR FLUID EJECTION DEVICE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2012/054021    International Application No.:    PCT/US2010/053190
Publication Date: 26.04.2012 International Filing Date: 19.10.2010
IPC:
B41J 2/16 (2006.01), B41J 2/14 (2006.01), B41J 2/175 (2006.01)
Applicants: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. [US/US]; 11445 Compaq Center Drive W. Houston, Texas 77070 (US) (For All Designated States Except US).
BHOWMIK, Siddhartha [US/US]; (US) (For US Only).
SMITH, J., Daniel [US/US]; (US) (For US Only)
Inventors: BHOWMIK, Siddhartha; (US).
SMITH, J., Daniel; (US)
Agent: KARNSTEIN, Walter, W.; Hewlett-Packard Company Intellectual Property Administration 3404 E. Harmony Road Mail Stop 35 Fort Collins, Colorado 80528 (US)
Priority Data:
Title (EN) METHOD OF FORMING SUBSTRATE FOR FLUID EJECTION DEVICE
(FR) PROCÉDÉ DE FORMATION D'UN SUBSTRAT POUR DISPOSITIF D'ÉJECTION DE FLUIDE
Abstract: front page image
(EN)A method of forming a substrate for a fluid ejection device includes forming an opening in the substrate from a second side of the substrate toward a first side of the substrate, further forming the opening in the substrate to the first side of the substrate, anisotropically wet etching the substrate, including increasing the opening at the second side of the substrate and forming the opening with converging sidewalls from the second side to the first side, and after anisotropically wet etching the substrate, isotropically etching the substrate.
(FR)L'invention porte sur un procédé de formation d'un substrat pour un dispositif d'éjection de fluide, lequel procédé met en œuvre la formation d'une ouverture dans le substrat à partir d'un second côté du substrat vers un premier côté du substrat, et, également, la formation de l'ouverture dans le substrat vers le premier côté du substrat, la gravure humide anisotrope du substrat, comprenant l'augmentation de l'ouverture du second côté du substrat et la formation de l'ouverture avec des parois latérales convergentes à partir du second côté vers le premier côté, et, après la gravure humide anisotrope du substrat, la gravure isotrope du substrat.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)