WIPO logo
Mobile | Deutsch | Español | Français | 日本語 | 한국어 | Português | Русский | 中文 | العربية |
PATENTSCOPE

Search International and National Patent Collections
World Intellectual Property Organization
Search
 
Browse
 
Translate
 
Options
 
News
 
Login
 
Help
 
Machine translation
1. (WO2012053321) HIGH-FREQUENCY MODULE AND METHOD FOR PRODUCING SAME
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2012/053321    International Application No.:    PCT/JP2011/071936
Publication Date: 26.04.2012 International Filing Date: 20.09.2011
IPC:
H01L 23/00 (2006.01), H01L 23/02 (2006.01), H01L 23/12 (2006.01)
Applicants: NEC CORPORATION [JP/JP]; 7-1,Shiba 5-chome, Minato-ku, Tokyo 1088001 (JP) (For All Designated States Except US).
OUCHI, Akira [JP/JP]; (JP) (For US Only).
SHIBUYA, Akinobu [JP/JP]; (JP) (For US Only).
MIYATA, Akira [JP/JP]; (JP) (For US Only).
MIYAZAKI, Ryo [JP/JP]; (JP) (For US Only)
Inventors: OUCHI, Akira; (JP).
SHIBUYA, Akinobu; (JP).
MIYATA, Akira; (JP).
MIYAZAKI, Ryo; (JP)
Agent: SHIMOSAKA, Naoki; c/o NEC CORPORATION, 7-1,Shiba 5-chome, Minato-ku, Tokyo 1088001 (JP)
Priority Data:
2010-236272 21.10.2010 JP
2011-019613 01.02.2011 JP
Title (EN) HIGH-FREQUENCY MODULE AND METHOD FOR PRODUCING SAME
(FR) MODULE HAUTE FRÉQUENCE ET SON PROCÉDÉ DE PRODUCTION
(JA) 高周波モジュール及びその製造方法
Abstract: front page image
(EN)This high-frequency module is characterized by being provided with: a semiconductor element that is provided with a first electrode on at least one surface thereof; a substrate provided with a second electrode on the surface that faces the semiconductor element; a bump electrode that connects the first electrode and the second electrode; an insulating film that covers the surroundings of the bump electrode, the first electrode, and the second electrode; and a first conductive resin that connects the semiconductor element and the substrate and that radiates heat released by the semiconductor element.
(FR)L'invention concerne un module haute fréquence caractérisé en ce qu'il comprend : un élément semi-conducteur doté d'une première électrode sur au moins l'une de ses surfaces ; un substrat doté d'une seconde électrode sur la surface opposée à l'élément semi-conducteur ; une électrode à bosses qui connecte la première et la seconde électrode ; un film d'isolation qui recouvre les environs de l'électrode à bosses, de la première électrode et de la seconde électrode ; et une première résine conductrice qui connecte l'élément semi-conducteur et le substrat et qui émet la chaleur libérée par l'élément semi-conducteur.
(JA)本発明における高周波モジュールは、少なくとも一方の面に第1電極を設けている半導体素子と、半導体素子と対向する面に第2電極を設けている基板と、第1電極と第2電極とを接続するバンプ電極と、バンプ電極、第1電極、および第2電極の周囲を被覆する絶縁膜と、半導体素子と基板とを接続し半導体素子が発する熱を放熱する第1導電性樹脂とを備えていることを特徴とする。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)