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1. (WO2012051786) CHEMICAL-MECHANICAL POLISHING SLURRY
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2012/051786    International Application No.:    PCT/CN2011/001453
Publication Date: 26.04.2012 International Filing Date: 29.08.2011
IPC:
C09G 1/02 (2006.01)
Applicants: ANJI MICROELECTRONICS (SHANGHAI) CO., LTD. [CN/CN]; 602, Building #5 No.3000 Longdong Ave. Zhangjiang Hi-Tech Park Pudong, Shanghai 201203 (CN) (For All Designated States Except US).
SONG, Weihong [CN/CN]; (CN) (For US Only).
YAO, Ying [CN/CN]; (CN) (For US Only)
Inventors: SONG, Weihong; (CN).
YAO, Ying; (CN)
Agent: HANHONG LAW FIRM; Room 1506-07 New HuangPu Financial Building No. 61 East Nanjing Road Shanghai 200002 (CN)
Priority Data:
201010517505.7 22.10.2010 CN
Title (EN) CHEMICAL-MECHANICAL POLISHING SLURRY
(FR) SUSPENSION DE POLISSAGE MÉCANICO-CHIMIQUE
(ZH) 一种化学机械抛光液
Abstract: front page image
(EN)Disclosed is a chemical-mechanical polishing slurry for planarizing a barrier layer, at least comprising abrasive particles, a metal chelating agent, combined metal corrosion inhibitors, an organic solvent, and an oxidant. The polishing slurry has a high removal rate for a medium material and a low dielectric material, a good surface defect correction capability, and good stability, and can effectively alleviate the remaining of a metal compound on a polishing pad.
(FR)L'invention concerne une suspension de polissage mécanico-chimique pour planariser une couche barrière, comprenant au moins des particules abrasives, un agent chélatant de métal, des inhibiteurs de corrosion de métal combinés, un solvant organique, et un oxydant. La suspension de polissage a un taux d'élimination élevé pour un matériau support et un matériau diélectrique faible, une bonne capacité de correction de défaut de surface, et une bonne stabilité, et peut efficacement réduire le restant d'un composé de métal sur un tampon de polissage.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, QA, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)