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Machine translation
1. (WO2012051113) ATOMIC LAYER DEPOSITION OF CRYSTALLINE PrCaMnO (PCMO) AND RELATED STRUCTURES AND METHODS
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2012/051113    International Application No.:    PCT/US2011/055609
Publication Date: 19.04.2012 International Filing Date: 10.10.2011
IPC:
H01L 21/205 (2006.01), H01L 21/8247 (2006.01), H01L 27/115 (2006.01)
Applicants: MICRON TECHNOLOGY, INC. [US/US]; Mail Stop 525 8000 South Federal Way Boise, Idaho 83707-0006 (US) (For All Designated States Except US).
MARSH, Eugene P. [US/US]; (US) (For US Only)
Inventors: MARSH, Eugene P.; (US)
Agent: WHITLOCK, Nathan E.; Traskbritt 230 South 500 East, Suite 230 PO Box 2550 Salt Lake City, Utah 84110-2550 (US)
Priority Data:
12/902,590 12.10.2010 US
Title (EN) ATOMIC LAYER DEPOSITION OF CRYSTALLINE PrCaMnO (PCMO) AND RELATED STRUCTURES AND METHODS
(FR) DÉPÔT DE COUCHES ATOMIQUES DE PRCAMNO (PCMO) CRISTALLIN, ET STRUCTURES ET PROCÉDÉS ASSOCIÉS
Abstract: front page image
(EN)Methods of forming a PrCaMnO (PCMO) material by atomic layer deposition. The methods include separately exposing a surface of a substrate to a manganese containing precursor, an oxygen containing precursor, a praseodymium containing precursor and a calcium containing precursor. The resulting PCMO material is crystalline. A semiconductor device structure including the PCMO material, and related methods, are also disclosed.
(FR)La présente invention concerne des procédés de formation d'un matériau PrCaMnO (PCMO) par dépôt de couches atomiques. Ces procédés consistent à exposer séparément une surface d'un substrat à un précurseur contenant du manganèse, à un précurseur contenant de l'oxygène, à un précurseur contenant du praséodyme et à un précurseur contenant du calcium. Le matériau PCMO obtenu est cristallin. L'invention concerne également une structure de dispositif à semi-conducteurs incluant le matériau PCMO, et des procédés associés.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)