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Machine translation
1. (WO2012050779) MEMORY ARRAYS HAVING DIFFERENT SUBSTANTIALLY VERTICAL DISTANCES BETWEEN ADJACENT MEMORY CELLS
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2012/050779    International Application No.:    PCT/US2011/052703
Publication Date: 19.04.2012 International Filing Date: 22.09.2011
IPC:
H01L 27/115 (2006.01), H01L 21/8247 (2006.01)
Applicants: MICRON TECHNOLOGY, INC. [US/US]; 8000 South Federal Way Ms 525 Boise, ID 83716 (US) (For All Designated States Except US).
GODA, Akira [JP/US]; (US) (For US Only)
Inventors: GODA, Akira; (US)
Agent: MYRUM, Tod A.; Leffert Jay & Polglaze, P.A. P.O. Box 2230 Minneapolis, MN 55402-0230 (US)
Priority Data:
12/903,264 13.10.2010 US
Title (EN) MEMORY ARRAYS HAVING DIFFERENT SUBSTANTIALLY VERTICAL DISTANCES BETWEEN ADJACENT MEMORY CELLS
(FR) RÉSEAUX DE MÉMOIRE AYANT DES DISTANCES VERTICALES SENSIBLEMENT DIFFÉRENTES ENTRE LES CELLULES DE MÉMOIRE VOISINES
Abstract: front page image
(EN)Memory arrays and their formation are disclosed. One such memory array has a string of series-coupled memory cells with a substantially vertical portion. A distance between adjacent memory cells at one end of the substantially vertical portion is greater than a distance between adjacent memory cells at an opposing end of the substantially vertical portion. For other embodiments, thicknesses of respective control gates of the memory cells and/or thicknesses of the dielectrics between successively adjacent control gates may increase as the distances of the respective control gates/dielectrics from the opposing end of the substantially vertical portion increase.
(FR)L'invention concerne des réseaux de mémoire et leur formation. Un tel réseau de mémoire présente une chaîne de cellules de mémoire connectées en série avec une portion sensiblement verticale. Une distance entre les cellules de mémoire voisines à une extrémité de la portion sensiblement verticale est supérieure à une distance entre cellules de mémoire voisines à une extrémité opposée de la portion sensiblement verticale. Pour d'autres modes de réalisation, les épaisseurs des portes de commande respectives des cellules de mémoire et/ou les épaisseurs des diélectriques entre les portes de commande successivement voisines peuvent augmenter à mesure que les distances des portes de commande respectives / diélectriques de l'extrémité opposée de la portion sensiblement verticale augmentent.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)