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1. (WO2012049801) METHOD FOR MANUFACTURING INFRARED SENSOR MATERIAL, INFRARED SENSOR MATERIAL, INFRARED SENSOR ELEMENT AND INFRARED IMAGE SENSOR
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2012/049801    International Application No.:    PCT/JP2011/004898
Publication Date: 19.04.2012 International Filing Date: 01.09.2011
IPC:
C01B 31/02 (2006.01), G01J 1/02 (2006.01), H01L 35/24 (2006.01), H01L 35/34 (2006.01)
Applicants: NEC CORPORATION [JP/JP]; 7-1, Shiba 5-chome, Minato-ku, Tokyo 1088001 (JP) (For All Designated States Except US).
SEKINO, Shoji [JP/JP]; (JP) (For US Only)
Inventors: SEKINO, Shoji; (JP)
Agent: HAYAMI, Shinji; Gotanda TG Bldg. 9F, 9-2, Nishi-Gotanda 7-chome, Shinagawa-ku, Tokyo 1410031 (JP)
Priority Data:
2010-230225 13.10.2010 JP
Title (EN) METHOD FOR MANUFACTURING INFRARED SENSOR MATERIAL, INFRARED SENSOR MATERIAL, INFRARED SENSOR ELEMENT AND INFRARED IMAGE SENSOR
(FR) PROCÉDÉ DE FABRICATION D'UN MATÉRIAU DE CAPTEUR INFRAROUGE, MATÉRIAU DE CAPTEUR INFRAROUGE, ÉLÉMENT CAPTEUR INFRAROUGE ET CAPTEUR D'IMAGE INFRAROUGE
(JA) 赤外線センサ材料の作製方法、赤外線センサ材料、赤外線センサ素子、赤外線イメージセンサ
Abstract: front page image
(EN)This method for manufacturing infrared sensor material comprises the steps of preparing a CNT dispersion by dispersing CNT in a solvent, depositing a CNT thin film using the prepared CNT dispersion as a raw material, annealing the deposited CNT thin film such that the absolute value of the temperature coefficient of resistance at -10-50°C is 1 %/K or more.
(FR)Ce procédé de fabrication de matériau de capteur infrarouge comprend les étapes consistant à préparer une dispersion de nanotubes de carbone (CNT) par dispersion de CNT dans un solvant, à déposer un film mince de CNT à l'aide de la dispersion de CNT préparée en tant que matière brute, à soumettre à un recuit le mince film de CNT déposé de telle sorte que la valeur absolue du coefficient de température de résistance à -10-50°C est de 1 %/K ou plus.
(JA) 本発明の赤外線センサ材料の作製方法は、CNTを溶媒中に分散させてCNT分散液を調製し、調製されたCNT分散液を原料としてCNT薄膜を成膜し、成膜したCNT薄膜をアニール処理して-10~50℃における抵抗温度係数の絶対値が1%/K以上とする工程を含んでいる。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)