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1. (WO2012048041) AMINE CURING SILICON-NITRIDE-HYDRIDE FILMS
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2012/048041    International Application No.:    PCT/US2011/054981
Publication Date: 12.04.2012 International Filing Date: 05.10.2011
IPC:
C08J 7/04 (2006.01), C08J 5/18 (2006.01), C08L 83/00 (2006.01), C09D 183/00 (2006.01), H01B 3/46 (2006.01)
Applicants: APPLIED MATERIALS, INC. [US/US]; 3050 Bowers Avenue Santa Clara, California 95054 (US) (For All Designated States Except US).
SOLIS, Earl Osman [US/US]; (US) (For US Only).
JI, Lili [CN/US]; (US) (For US Only).
ZHAO, Yue [CN/US]; (US) (For US Only).
MALLICK, Abhijit Basu [IN/US]; (US) (For US Only).
INGLE, Nitin K. [US/US]; (US) (For US Only)
Inventors: SOLIS, Earl Osman; (US).
JI, Lili; (US).
ZHAO, Yue; (US).
MALLICK, Abhijit Basu; (US).
INGLE, Nitin K.; (US)
Agent: BERNARD, Eugene J.; Kilpatrick Townsend & Stockton LLP Two Embarcadero Center, 8th Floor San Francisco, California 94111 (US)
Priority Data:
61/389,917 05.10.2010 US
13/227,589 08.09.2011 US
Title (EN) AMINE CURING SILICON-NITRIDE-HYDRIDE FILMS
(FR) TRAITEMENT PAR AMINE DE FILMS DE SILICIUM-NITRURE-HYDRURE
Abstract: front page image
(EN)Methods of forming dielectric layers are described. The methods may include forming a silicon-nitrogen-and-hydrogen-containing layer on a substrate. The methods include ozone curing the silicon-nitrogen-and-hydrogen-containing layer to turn the silicon-nitrogen-and-hydrogen-containing layer into a silicon-and-oxygen-containing layer. Following ozone curing, the layer is exposed to an amine-water combination at low temperature before an anneal. The presence of the amine cure allows the conversion to silicon-and-oxygen-containing layer to occur more rapidly and completely at a lower temperature during the anneal. The amine cure also enables the anneal to use a less oxidative environment to effect the conversion to the silicon-and-oxygen-containing layer.
(FR)L'invention concerne des procédés de formation de couches diélectriques. Les procédés peuvent inclure la formation d'une couche contenant du silicium-azote-et-hydrogène sur un substrat. Les procédés incluent un traitement à l'ozone de la couche contenant du silicium-azote-et-hydrogène pour transformer la couche contenant du silicium-azote-et-hydrogène en une couche contenant du silicium-et-oxygène. Après traitement à l'ozone, la couche est exposée à une combinaison d'amine-eau à basse température avant un recuit. La présence du traitement par amine permet l'apparition plus rapide et plus complète de la conversion en une couche contenant du silicium-et-oxygène à une température inférieure durant le recuit. Le traitement par amine permet aussi au recuit d'utiliser un environnement moins oxydatif pour effectuer la conversion en couche contenant du silicium-et-oxygène.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)