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1. (WO2012047770) CHEMICAL MECHANICAL PLANARIZATION PROCESSES FOR FABRICATION OF FINFET DEVICES
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2012/047770    International Application No.:    PCT/US2011/054521
Publication Date: 12.04.2012 International Filing Date: 03.10.2011
IPC:
H01L 21/304 (2006.01), H01L 21/336 (2006.01), H01L 29/78 (2006.01)
Applicants: INTERNATIONAL BUSINESS MACHINES CORPORATION [US/US]; New Orchard Road Armonk, NY 10504 (US) (For All Designated States Except US).
JSR CORPORATION [JP/JP]; 1-9-2 Higashi-Shinbashi Minato-Ku, Tokyo 105-8640 (JP) (For All Designated States Except US).
CHANG, Josephine, B. [US/US]; (US) (For US Only).
CHARNS, Leslie [US/US]; (US) (For US Only).
CUMMINGS, Jason, E. [US/US]; (US) (For US Only).
GUILLORN, Michael, A. [US/US]; (US) (For US Only).
HUPKA, Lukasz, J. [PL/US]; (US) (For US Only).
KOLI, Dinesh [IN/US]; (US) (For US Only).
KONNO, Tomohisa [JP/JP]; (JP) (For US Only).
KRISHNAN, Mahadevaiyer [US/US]; (US) (For US Only).
LOFARO, Michael, F. [US/US]; (US) (For US Only).
NALASKOWSKI, Jakub, W. [PL/US]; (US) (For US Only).
NODA, Masahiro [JP/JP]; (JP) (For US Only).
PENIGALAPATI, Dinesh, K. [IN/US]; (US) (For US Only).
YAMANAKA, Tatsuya [JP/JP]; (JP) (For US Only)
Inventors: CHANG, Josephine, B.; (US).
CHARNS, Leslie; (US).
CUMMINGS, Jason, E.; (US).
GUILLORN, Michael, A.; (US).
HUPKA, Lukasz, J.; (US).
KOLI, Dinesh; (US).
KONNO, Tomohisa; (JP).
KRISHNAN, Mahadevaiyer; (US).
LOFARO, Michael, F.; (US).
NALASKOWSKI, Jakub, W.; (US).
NODA, Masahiro; (JP).
PENIGALAPATI, Dinesh, K.; (US).
YAMANAKA, Tatsuya; (JP)
Agent: DAVIS, Jennifer; International Business Machine Corporation 2070 Route 52 Bldg. 321 M/d 482 Hopewell Junction, NY 12533 (US)
Priority Data:
13/012,836 25.01.2011 US
61/389,546 04.10.2010 US
Title (EN) CHEMICAL MECHANICAL PLANARIZATION PROCESSES FOR FABRICATION OF FINFET DEVICES
(FR) PROCÉDÉS DE PLANARISATION CHIMICO-MÉCANIQUE POUR LA FABRICATION DE DISPOSITIFS FINFET
Abstract: front page image
(EN)A planarization method includes planarizing a semiconductor wafer in a first chemical mechanical polish step to remove overburden and planarize a top layer leaving a thickness of top layer material over underlying layers. The top layer material is planarized in a second chemical mechanical polish step to further remove the top layer and expose underlying layers of a second material and a third material such that a selectivity of the top layer material to the second material to the third material is between about 1:1:1 to about 2:1:1 to provide a planar topography.
(FR)L'invention concerne un procédé de planarisation comprenant la planarisation d'une tranche de semi-conducteur dans une première étape de polissage chimico-mécanique pour retirer une surcharge et planariser une couche supérieure laissant une épaisseur de matière de couche supérieure sur des couches sous-jacentes. La matière de la couche supérieure est planarisée dans une seconde étape de polissage chimico-mécanique pour retirer encore la couche supérieure et exposer des couches sous-jacentes d'une seconde matière et d'une troisième matière de sorte qu'une sélectivité de la matière de la couche supérieure à la seconde matière à la troisième matière soit entre environ 1:1:1 à environ 2:1:1 pour fournir une topographie plane.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)