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1. (WO2012046955) NITRIDE BASED SEMICONDUCTOR LIGHT EMITTING DEVICE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2012/046955    International Application No.:    PCT/KR2011/006506
Publication Date: 12.04.2012 International Filing Date: 01.09.2011
IPC:
H01L 33/04 (2010.01), H01L 33/14 (2010.01)
Applicants: KOREA PHOTONICS TECHNOLOGY INSTITUTE [KR/KR]; 971-35, Wolchul-dong Buk-gu Gwangju 500-799 (KR) (For All Designated States Except US).
JEON, Seong Ran [KR/KR]; (KR) (For US Only).
SONG, Young Ho [KR/KR]; (KR) (For US Only).
KIM, Jae Bum [KR/KR]; (KR) (For US Only).
KIM, Young Woo [KR/KR]; (KR) (For US Only).
CHEON, Woo Young [KR/KR]; (KR) (For US Only).
KIM, Jin Hong [KR/KR]; (KR) (For US Only)
Inventors: JEON, Seong Ran; (KR).
SONG, Young Ho; (KR).
KIM, Jae Bum; (KR).
KIM, Young Woo; (KR).
CHEON, Woo Young; (KR).
KIM, Jin Hong; (KR)
Agent: PARK, Chong Han; Room 202, Ace High-end Tower, 235-2 Guro-dong, Guro-gu Seoul 152-740 (KR)
Priority Data:
10-2010-0096356 04.10.2010 KR
Title (EN) NITRIDE BASED SEMICONDUCTOR LIGHT EMITTING DEVICE
(FR) DISPOSITIF ÉLECTROLUMINESCENT SEMI-CONDUCTEUR À BASE DE NITRURE
(KO) 질화물계 반도체 발광소자
Abstract: front page image
(EN)The present invention relates to a nitride based semiconductor light emitting device, and more particularly, to a nitride based semiconductor light emitting device with improved luminescence efficiency by increasing a recombination rate of electrons and holes contributing to luminescence, which results from matching the spatial distribution of electron and hole wave functions. The nitride based semiconductor light emitting device according to the present invention includes an n-type nitride layer, an active layer formed on the n-type nitride layer, and a p-type nitride layer formed on the active layer. At this stage, a strain control layer is formed from at least one layer in the active layer, and the at least one layer has a larger energy bandgap than a quantum well layer in the active layer. The strain control layer is disposed in an area where the quantum well layer of the active layer is formed. Moreover, an energy bandgap of the strain control layer is less than that of a quantum barrier layer of the active layer.
(FR)La présente invention se rapporte à un dispositif électroluminescent semi-conducteur à base de nitrure et plus particulièrement, à un dispositif électroluminescent semi-conducteur à base de nitrure qui présente un rendement de luminescence amélioré en augmentant la vitesse de recombinaison des électrons et des trous qui contribuent à l'électroluminescence, ce qui résulte de l'appariement de la distribution spatiale des fonctions d'onde d'électrons et de trous. Le dispositif électroluminescent semi-conducteur à base de nitrure selon la présente invention comprend une couche de nitrure de type n, une couche active formée sur la couche de nitrure de type n, et une couche de nitrure de type p formée sur la couche active. A ce stade, une couche de commande de contrainte est formée à partir d'une couche au moins dans la couche active et la ou les couches présentent une bande interdite d'énergie plus grande que celle d'une couche de puits quantique dans la couche active. La couche de commande de contrainte est disposée dans une zone où est formée la couche de puits quantique de la couche active. En outre, une bande interdite d'énergie de la couche de commande de contrainte est inférieure à celle d'une couche barrière quantique de la couche active.
(KO)본 발명은 질화물계 반도체 발광소자에 관한 것으로, 전자와 정공의 파동함수의 공간적 분포를 일치 시키므로서 발광에 기여하는 전자와 정공의 재결합률을 증가시켜 발광효율을 향상시키기 위한 것이다. 본 발명에 따른 질화물계 반도체 발광소자는 n형 질화물층과, n형 질화물층 상에 형성된 활성층, 및 활성층 위에 형성된 p형 질화물층을 포함한다. 이때 스트레인 제어층은 활성층의 내부에 적어도 하나의 층으로 형성되며, 적어도 하나의 층 중 적어도 하나는 활성층의 양자우물층의 에너지 밴드갭보다 큰 에너지 밴드갭을 갖는다. 스트레인 제어층은 활성층의 양자우물층이 형성된 영역에 개재된다. 그리고 스트레인 제어층의 에너지 밴드갭은 활성층의 양자장벽층의 에너지 밴드갭보다는 작다.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Korean (KO)
Filing Language: Korean (KO)