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1. (WO2012044284) DIRECTIONALLY RECRYSTALLIZED GRAPHENE GROWTH SUBSTRATES
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2012/044284    International Application No.:    PCT/US2010/050566
Publication Date: 05.04.2012 International Filing Date: 28.09.2010
IPC:
C01B 31/02 (2006.01), C03B 29/00 (2006.01), C23C 16/26 (2006.01), H01L 21/20 (2006.01)
Applicants: YAGER, Thomas, A. [US/US]; (US) (For US Only).
EMPIRE TECHNOLOGY DEVELOPMENT LLC [US/US]; 2711 Centerville Road Suite 400 Wilmington, New Castle County, DE 19808 (US) (For All Designated States Except US)
Inventors: YAGER, Thomas, A.; (US)
Agent: HINCHLIFFE, Robert, D.; Omikron IP Law Group 16325 Boones Ferry Road Suite 204 Lake Oswego, OR 97035 (US)
Priority Data:
Title (EN) DIRECTIONALLY RECRYSTALLIZED GRAPHENE GROWTH SUBSTRATES
(FR) SUBSTRATS DE CROISSANCE DE GRAPHÈNE RECRISTALLISÉS DE MANIÈRE ORIENTÉE
Abstract: front page image
(EN)Processes and/or methods of forming substrates suitable for growing grapheme are generally described including forming a metal layer on a prepared substrate, forming a layer of dielectric material on the metal layer, and then directionally recrystallising the metal layer to form a recrystallized metal layer suitable for growing a grapheme monolayer having a length of about fifteen microns or greater.
(FR)L'invention concerne de manière générale des processus et/ou des procédés de formation de substrats permettant de faire croître du graphène, qui comprennent les étapes consistant à : former une couche métallique sur un substrat préparé, former une couche de matériau diélectrique sur la couche métallique et recristalliser ensuite de manière orientée la couche métallique pour former une couche métallique recristallisée permettant de faire croître une monocouche de graphène, dont la longueur est supérieure ou égale à environ quinze microns.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)