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1. (WO2012043921) SEMICONDUCTOR DEVICES AND METHODS FOR MANUFACTURING THE SAME
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2012/043921    International Application No.:    PCT/KR2010/007815
Publication Date: 05.04.2012 International Filing Date: 05.11.2010
IPC:
H01L 31/042 (2006.01)
Applicants: LG ELECTRONICS INC. [KR/KR]; 20 Yeouido-dong, Yeongdeungpo-gu Seoul 150-721 (KR) (For All Designated States Except US).
JIN, Yoonsil [KR/KR]; (KR) (For US Only).
SHIM, Goohwan [KR/KR]; (KR) (For US Only).
CHOE, Youngho [KR/KR]; (KR) (For US Only).
PARK, Changseo [KR/KR]; (KR) (For US Only)
Inventors: JIN, Yoonsil; (KR).
SHIM, Goohwan; (KR).
CHOE, Youngho; (KR).
PARK, Changseo; (KR)
Agent: ROYAL PATENT LAW OFFICE; 1st. Floor DOWON Bldg. Nam-Hyun Dong 1059-11 Kwanak Gu, Seoul 151-800 (KR)
Priority Data:
10-2010-0093108 27.09.2010 KR
Title (EN) SEMICONDUCTOR DEVICES AND METHODS FOR MANUFACTURING THE SAME
(FR) DISPOSITIFS SEMI-CONDUCTEURS ET LEURS PROCÉDÉS DE FABRICATION
Abstract: front page image
(EN)A semiconductor device includes a substrate and a first insulating layer. The first insulating layer includes a first lower layer and a first upper layer on the first lower layer. The first insulating layer has a first opening through the first lower layer and the first upper layer. A maximum width of the first opening at the first lower layer is different from a maximum width of the first opening at the first upper layer.
(FR)Un dispositif semi-conducteur selon l'invention comprend un substrat et une première couche isolante. La première couche isolante comprend une première couche inférieure et une première couche supérieure sur la première couche inférieure. La première couche isolante a une première ouverture à travers la première couche inférieure et la première couche supérieure. Une largeur maximale de la première ouverture sur la première couche inférieure est différente d'une largeur maximale de la première ouverture sur la première couche supérieure.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)