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1. (WO2012043474) POLYCRYSTALLINE ALUMINUM NITRIDE SUBSTRATE FOR GROWING GaN-BASED SEMICONDUCTOR CRYSTAL, AND GaN-BASED-SEMICONDUCTOR MANUFACTURING METHOD USING SAME
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2012/043474    International Application No.:    PCT/JP2011/071884
Publication Date: 05.04.2012 International Filing Date: 26.09.2011
IPC:
H01L 21/205 (2006.01), C04B 35/581 (2006.01), C23C 16/34 (2006.01)
Applicants: KABUSHIKI KAISHA TOSHIBA [JP/JP]; 1-1, Shibaura 1-chome, Minato-ku, Tokyo 1058001 (JP) (For All Designated States Except US).
TOSHIBA MATERIALS CO., LTD. [JP/JP]; 8, Shinsugita-cho, Isogo-ku, Yokohama-shi, Kanagawa 2358522 (JP) (For All Designated States Except US).
KOMORITA Hiroshi [JP/JP]; (JP) (For US Only).
NAKAYAMA Noritaka [JP/JP]; (JP) (For US Only).
TAKANAMI Kentaro [JP/JP]; (JP) (For US Only)
Inventors: KOMORITA Hiroshi; (JP).
NAKAYAMA Noritaka; (JP).
TAKANAMI Kentaro; (JP)
Agent: KATSUNUMA Hirohito; Kyowa Patent & Law Office, Room 323, Fuji Bldg., 2-3, Marunouchi 3-chome, Chiyoda-ku, Tokyo 1000005 (JP)
Priority Data:
2010-215697 27.09.2010 JP
Title (EN) POLYCRYSTALLINE ALUMINUM NITRIDE SUBSTRATE FOR GROWING GaN-BASED SEMICONDUCTOR CRYSTAL, AND GaN-BASED-SEMICONDUCTOR MANUFACTURING METHOD USING SAME
(FR) SUBSTRAT DE NITRURE D'ALUMINIUM POLYCRISTALLIN POUR LA CROISSANCE DE CRISTAL SEMI-CONDUCTEUR À BASE DE GaN, ET PROCÉDÉ DE FABRICATION DE SEMI-CONDUCTEUR À BASE DE GaN UTILISANT UN TEL SUBSTRAT
(JA) GaNベース半導体結晶成長用多結晶窒化アルミニウム基材およびそれを用いたGaNベース半導体の製造方法
Abstract: front page image
(EN)A polycrystalline aluminum nitride substrate that is effective in growing a GaN crystal. Said polycrystalline aluminum nitride substrate, a base material for causing grain growth of a GaN-based semiconductor, is characterized by containing 1-10% of a sintering aid by mass, having a thermal conductivity of at least 150 W/m∙K, and having no surface recesses with maximum diameters greater than 200 µm.
(FR)La présente invention concerne un substrat de nitrure d'aluminium polycristallin efficace pour la croissance de cristal semi-conducteur à base de GaN. Ledit substrat de nitrure d'aluminium polycristallin, un matériau de base pour entraîner la croissance du grain d'un semi-conducteur à base de GaN, est caractérisé en ce qu'il contient entre 1 et 10% en poids d'un agent de frittage, ayant une conductivité thermique égale ou supérieure à 150 W/m∙K, et ne présentant pas d'évidements de surface avec des diamètres maximum supérieur à 200 µm.
(JA) GaNを結晶成長させるのに有効な多結晶窒化アルミニウム基板を提供する。GaNベース半導体を粒成長させるための基板材料としての多結晶窒化アルミニウム基材であって、焼結助剤成分を1~10質量%含有し、熱伝導率150W/m・K以上、かつ、基板表面に最大径200μmを超える凹部がないことを特徴とする。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)