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1. (WO2012043431) PHOTOELECTRIC CONVERSION DEVICE AND METHOD FOR PRODUCING PHOTOELECTRIC CONVERSION DEVICE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2012/043431    International Application No.:    PCT/JP2011/071793
Publication Date: 05.04.2012 International Filing Date: 26.09.2011
IPC:
H01L 31/04 (2006.01)
Applicants: KYOCERA CORPORATION [JP/JP]; 6, Takeda Tobadono-cho, Fushimi-ku, kyoto-shi, Kyoto 6128501 (JP) (For All Designated States Except US).
MATSUOKA, Ryo [JP/JP]; (JP) (For US Only).
KYUZO, Manabu [JP/JP]; (JP) (For US Only).
HORIUCHI, Nobuyuki [JP/JP]; (JP) (For US Only).
KAMADA, Rui [JP/JP]; (JP) (For US Only).
TOYOTA, Daisuke [JP/JP]; (JP) (For US Only).
OKAWA, Yoshihide [JP/JP]; (JP) (For US Only)
Inventors: MATSUOKA, Ryo; (JP).
KYUZO, Manabu; (JP).
HORIUCHI, Nobuyuki; (JP).
KAMADA, Rui; (JP).
TOYOTA, Daisuke; (JP).
OKAWA, Yoshihide; (JP)
Priority Data:
2010-216480 28.09.2010 JP
Title (EN) PHOTOELECTRIC CONVERSION DEVICE AND METHOD FOR PRODUCING PHOTOELECTRIC CONVERSION DEVICE
(FR) DISPOSITIF DE CONVERSION PHOTOÉLECTRIQUE ET PROCÉDÉ DE PRODUCTION D'UN DISPOSITIF DE CONVERSION PHOTOÉLECTRIQUE
(JA) 光電変換装置および光電変換装置の製造方法
Abstract: front page image
(EN)[Problem] To provide a photoelectric conversion device having high photoelectric conversion efficiency. [Solution] A photoelectric conversion device (10) is provided with: an electrode layer (2); and a semiconductor layer (3) which comprises a plurality of layers stacked on the electrode layer (2) and contains a chalcopyrite compound semiconductor. A first layer (3a) from among the plurality of semiconductor layers (3a to 3c) is nearest the electrode layer (2) and is thinner than the other layers (3b, 3c).
(FR)L'invention concerne un dispositif de conversion photoélectrique dont le rendement de conversion photoélectrique est élevé. Le dispositif de conversion photoélectrique (10) comporte : une couche d'électrode (2) ; et une couche semi-conductrice (3) qui comprend une pluralité de couches empilées sur la couche d'électrode (2) et contient un semi-conducteur à composition de chalcopyrite. Une première couche (3a) parmi la pluralité de couches semi-conductrices (3a à 3c) est la plus proche de la couche d'électrode (2) et est plus mince que les autres couches (3b, 3c).
(JA)【課題】光電変換効率の高い光電変換装置を提供する。 【解決手段】光電変換装置10は、電極層2と、電極層2上に複数層が積層された、カルコパイライト系化合物半導体を含んでなる半導体層3とを具備しており、複数層の半導体層3a~3cのうち電極層2に最も近い第1の層3aが他の層3b、3cよりも薄い。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)