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1. WO2012022342 - SEMICONDUCTOR COMPONENT

Publication Number WO/2012/022342
Publication Date 23.02.2012
International Application No. PCT/DE2011/075172
International Filing Date 21.07.2011
IPC
H01L 51/10 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
05specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier
10Details of devices
H01L 51/05 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
05specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier
CPC
H01L 51/002
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
0001Processes specially adapted for the manufacture or treatment of devices or of parts thereof
002Making n- or p-doped regions
H01L 51/05
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
05specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier ; multistep processes for their manufacture
H01L 51/0562
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
05specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier ; multistep processes for their manufacture
0504the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or swiched, e.g. three-terminal devices
0508Field-effect devices, e.g. TFTs
0512insulated gate field effect transistors
0558characterised by the channel of the transistor
0562the channel comprising two or more active layers, e.g. forming pn - hetero junction
H01L 51/105
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
05specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier ; multistep processes for their manufacture
10Details of devices
102Electrodes
105Ohmic contacts, e.g. source and drain electrodes
Applicants
  • NOVALED AG [DE]/[DE] (AllExceptUS)
  • DOROK, Sascha [DE]/[DE] (UsOnly)
  • LESSMANN, Rudolf [DE]/[DE] (UsOnly)
  • CANZLER, Tobias [DE]/[DE] (UsOnly)
  • HUANG, Qiang [CN]/[DE] (UsOnly)
  • KÖHN, Christiane [DE]/[DE] (UsOnly)
Inventors
  • DOROK, Sascha
  • LESSMANN, Rudolf
  • CANZLER, Tobias
  • HUANG, Qiang
  • KÖHN, Christiane
Agents
  • BITTNER, Thomas, L.
Priority Data
10 2010 031 979.122.07.2010DE
Publication Language German (DE)
Filing Language German (DE)
Designated States
Title
(DE) HALBLEITERBAUELEMENT
(EN) SEMICONDUCTOR COMPONENT
(FR) COMPOSANT SEMI-CONDUCTEUR
Abstract
(DE)
Die Erfindung betrifft ein Halbleiterbauelement mit einer Schichtanordnung mit einer Elektrode (20a, 20b) aus einem Elektrodenmaterial, einer organischen Halbleiterschicht (22) auss organischem Material, einer Injektionsschicht (21), welche zwischen der Elektrode und der organischen Halbleiterschicht angeordnet ist und aus einem molekularen Dotierungsmaterial besteht, das ein elektrischer Dotand für das organische Material der organischen Halbleiterschicht ist, und einer Zusatzschicht (25), welche auf der der Elektrode zugewandten Seite der Injektionsschicht an der Injektionsschicht angeordnet ist und aus einem Zusatzmaterial besteht, welches bei Kontakt mit dem molekularen Dotierungsmaterial dessen Dotierungsaffinität bezüglich des organischen Materials der organischen Halbleiterschicht verändert, wobei in der Injektionsschicht ein Schichtbereich mit einer ersten Dotierungsaffinität des molekularen Dotierungsmaterials bezüglich des organischen Materials und ein weiterer Schichtbereich mit einer zweiten, im Vergleich zur ersten Dotierungsaffinität kleineren Dotierungsaffinität des molekularen Dotierungsmaterials bezüglich des organischen Materials gebildet sind. Des Weiteren betrifft die Erfindung ein Verfahren zum Herstellen eines Halbleiterbauelementes sowie die Verwendung eines Halbleiterelementes.
(EN)
The invention relates to a semiconductor component comprising a layer arrangement comprising an electrode (20a, 20b) composed of an electrode material, an organic semiconductor layer (22) composed of organic material, an injection layer (21), which is arranged between the electrode and the organic semiconductor layer and consists of a molecular doping material, which is an electrical dopant for the organic material of the organic semiconductor layer, and an additional layer (25), which is arranged on the injection layer on that side of the injection layer which faces the electrode, and consists of an additional material which, upon contact with the molecular doping material, changes the doping affinity thereof with respect to the organic material of the organic semiconductor layer. Formed in the injection layer are a layer region having a first doping affinity of the molecular doping material with respect to the organic material and a further layer region having a second doping affinity of the molecular doping material with respect to the organic material, said second doping affinity being lower by comparison with the first doping affinity. The invention furthermore relates to a method for producing a semiconductor component and to the use of a semiconductor component.
(FR)
L'invention concerne un composant semi-conducteur présentant un agencement en couches ayant une électrode (20a, 20b) en un matériau d'électrode, une couche semi-conductrice (22) organique en un matériau organique, une couche d'injection (21), qui est disposée entre l'électrode et la couche semi-conductrice organique et se compose d'un matériau de dopage moléculaire qui est un dopant électrique pour le matériau organique de la couche semi-conductrice organique, et une couche d'addition, qui est disposée sur le côté de la couche d'injection tourné vers l'électrode et qui se compose d'un matériau d'addition qui, en cas de contact avec le matériau de dopage moléculaire modifie son affinité de dopage par rapport au matériau organique de la couche semi-conductrice organique. Dans la couche d'injection sont formées une zone de couche ayant une première affinité de dopage du matériau de dopage moléculaire par rapport au matériau organique et une autre zone de couche ayant une deuxième affinité de dopage du matériau de dopage moléculaire par rapport au matériau organique, plus petite en comparaison avec la première affinité de dopage. La présente invention concerne en outre un procédé de fabrication d'un composant semi-conducteur ainsi que l'emploi d'un composant semi-conducteur.
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