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1. (WO2012003315) CORROSION-RESISTANT COPPER-TO-ALUMINUM BONDS
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2012/003315 International Application No.: PCT/US2011/042594
Publication Date: 05.01.2012 International Filing Date: 30.06.2011
IPC:
H01L 21/60 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
50
Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/06-H01L21/326162
60
Attaching leads or other conductive members, to be used for carrying current to or from the device in operation
Applicants:
ZENG, Kejun [US/US]; US (UsOnly)
PENG, Wei Qun [US/US]; US (UsOnly)
TEXAS INSTRUMENTS INCORPORATED [US/US]; P.O. Box 655474, Mail Station 3999 Dallas, TX 75265-5474, US (AllExceptUS)
TEXAS INSTRUMENTS JAPAN LIMTED [JP/JP]; 24-1, Nishi-Shinjuku 6-chome Shinjuku-ku Tokyo 160-8366, JP (JP)
Inventors:
ZENG, Kejun; US
PENG, Wei Qun; US
Agent:
FRANZ, Warren, L.; Texas Instruments Incorporated Deputy General Patent Counsel P.o. Box 655474, Mail Station 3999 Dallas, TX 75265-5474, US
Priority Data:
12/829,95102.07.2010US
Title (EN) CORROSION-RESISTANT COPPER-TO-ALUMINUM BONDS
(FR) LIAISONS CUIVRE-ALUMINIUM RÉSISTANT À LA CORROSION
Abstract:
(EN) A connection is formed by a copper wire (112) alloyed with a noble metal in a first concentration bonded to a terminal pad (101) of a semiconductor chip. The end of the wire is covered with a zone including an alloy of copper and the noble metal in a second concentration higher than the first concentration. When the noble metal is gold, the first concentration may range from about 0.5 to 2.0 weight %, and the second concentration from about 1.0 to 5.0 weight %. The zone of the alloy of the second concentration may have a thickness from about 20 to 50 nm.
(FR) Cette invention concerne la formation d'une connexion au moyen d'un fil de cuivre (112) allié à un métal noble selon une première concentration et soudé à une plage de connexion (101) d'une puce semi-conductrice. L'extrémité du fil est recouverte d'une zone comprenant un alliage de cuivre et du métal noble selon une seconde concentration supérieure à la première concentration. Quand le métal noble est de l'or, la première concentration peut aller de 0,5 à 2,0 % en poids, et la seconde concentration peut aller de 1,0 à 5,0 % en poids. La zone de l'alliage présentant la seconde concentration peut avoir une épaisseur de 20 à 50 nm.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)