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1. WO2012001662 - HALL SENSOR SYSTEM

Publication Number WO/2012/001662
Publication Date 05.01.2012
International Application No. PCT/IB2011/052911
International Filing Date 01.07.2011
IPC
G01R 33/07 2006.01
GPHYSICS
01MEASURING; TESTING
RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
33Arrangements or instruments for measuring magnetic variables
02Measuring direction or magnitude of magnetic fields or magnetic flux
06using galvano-magnetic devices
07Hall-effect devices
G01R 33/00 2006.01
GPHYSICS
01MEASURING; TESTING
RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
33Arrangements or instruments for measuring magnetic variables
CPC
G01R 33/0005
GPHYSICS
01MEASURING; TESTING
RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
33Arrangements or instruments for measuring magnetic variables
0005Geometrical arrangement of magnetic sensor elements; Apparatus combining different magnetic sensor types
G01R 33/07
GPHYSICS
01MEASURING; TESTING
RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
33Arrangements or instruments for measuring magnetic variables
02Measuring direction or magnitude of magnetic fields or magnetic flux
06using galvano-magnetic devices, e.g. Hall effect devices; using magneto-resistive devices
07Hall effect devices
G01R 33/075
GPHYSICS
01MEASURING; TESTING
RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
33Arrangements or instruments for measuring magnetic variables
02Measuring direction or magnitude of magnetic fields or magnetic flux
06using galvano-magnetic devices, e.g. Hall effect devices; using magneto-resistive devices
07Hall effect devices
072Constructional adaptation of the sensor to specific applications
075Hall devices configured for spinning current measurements
H01L 43/065
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
06Hall-effect devices
065Semiconductor Hall-effect devices
Applicants
  • LEM INTELLECTUAL PROPERTY S.A. [CH]/[CH] (AllExceptUS)
  • KEJIK, Pavel [CZ]/[CH] (UsOnly)
  • REYMOND, Serge [CH]/[CH] (UsOnly)
Inventors
  • KEJIK, Pavel
  • REYMOND, Serge
Agents
  • REUTELER & CIE SA
Priority Data
10168375.302.07.2010EP
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) HALL SENSOR SYSTEM
(FR) SYSTÈME DE CAPTEUR À EFFET HALL
Abstract
(EN)
Integrated circuit Hall sensor system comprising a plurality of elementary blocks (EB), each elementary block including a Hall cell (4), a differential pair (8) of an input stage of a Differential Difference Amplifier (DDA), and terminals (12a, 12b), wherein the terminals (12a, 12b) are placed laterally on opposing outer sides of each elementary block parallel to a Y axis and the plurality of elementary blocks are arranged in a juxtaposed manner to form at least one row (6a, 6b) extending along an X axis orthogonal to the Y axis and interconnected by the terminals.
(FR)
L'invention concerne un système de capteur à effet Hall à circuit intégré comprenant une pluralité de blocs élémentaires (EB), chaque bloc élémentaire comprenant une cellule de Hall (4), une paire (8) différentielle d'un étage d'entrée d'un amplificateur différentiel de différence (DDA) et des bornes (12a, 12b), lesdites bornes (12a, 12b) étant placées latéralement sur des côtés extérieurs mutuellement en regard de chaque bloc élémentaire parallèle à un axe Y et la pluralité de blocs élémentaires étant disposée de façon juxtaposée de manière à former au moins une rangée (6a, 6b) s'étendant le long d'un axe X orthogonal à l'axe Y et interconnectée par les bornes.
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