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1. WO2012000428 - METHOD FOR PREPARING HIGH PURITY SILICON

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Publication Number WO/2012/000428
Publication Date 05.01.2012
International Application No. PCT/CN2011/076517
International Filing Date 28.06.2011
IPC
C01B 33/023 2006.1
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF
33Silicon; Compounds thereof
02Silicon
021Preparation
023by reduction of silica or silica-containing material
C01B 33/037 2006.1
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF
33Silicon; Compounds thereof
02Silicon
037Purification
CPC
C01B 33/023
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; ; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
33Silicon; Compounds thereof
02Silicon
021Preparation
023by reduction of silica or ; free; silica-containing material
C01B 33/037
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; ; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
33Silicon; Compounds thereof
02Silicon
037Purification
C01P 2006/80
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
2006Physical properties of inorganic compounds
80Compositional purity
Applicants
  • SHENZHEN BYD AUTO R&D COMPANY LIMITED [CN]/[CN] (AllExceptUS)
  • BYD COMPANY LIMITED [CN]/[CN] (AllExceptUS)
  • PENG, Shaobo [CN]/[CN] (UsOnly)
  • SI, Lei [CN]/[CN] (UsOnly)
  • SHEN, Yishun [CN]/[CN] (UsOnly)
  • WU, Zhineng [CN]/[CN] (UsOnly)
Inventors
  • PENG, Shaobo
  • SI, Lei
  • SHEN, Yishun
  • WU, Zhineng
Agents
  • TSINGYIHUA INTELLECTUAL PROPERTY LLC
Priority Data
201010218843.029.06.2010CN
Publication Language English (en)
Filing Language English (EN)
Designated States
Title
(EN) METHOD FOR PREPARING HIGH PURITY SILICON
(FR) PROCÉDÉ DE PRÉPARATION D'UN SILICIUM DE PURETÉ ÉLEVÉE
front page image
Abstract
(EN) A method for preparing a high purity silicon comprises steps of: providing a raw material mixture containing a quartz sand, an aluminum powder and a fluorite powder; heating the raw material mixture to a temperature of about 1100℃ to about 1700℃ to melt the raw material mixture allowing a thermite reaction to obtain a liquid silicon and a slag; and separating and cooling the liquid silicon to obtain a silicon product, the impurity content of which is less than 1wt%.
(FR) Procédé de préparation d'un silicium de pureté élevée comprenant les étapes consistant à : partir d'un mélange de matières premières contenant du sable de quartz, une poudre d'aluminium et une poudre de fluorite ; chauffer le mélange de matières premières jusqu'à une température d'environ 1100-1700°C pour le faire fondre et induire une réaction du thermite pour obtenir un silicium liquide et un laitier ; et séparer et refroidir le silicium liquide pour obtenir un produit de silicium ayant une teneur en impuretés inférieure à 1 % en poids.
Latest bibliographic data on file with the International Bureau
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