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1. (WO2011162161) SILICON WAFER, SEMICONDUCTOR DEVICE, SILICON WAFER PRODUCTION METHOD AND SEMICONDUCTOR DEVICE PRODUCTION METHOD

Pub. No.:    WO/2011/162161    International Application No.:    PCT/JP2011/063818
Publication Date: Dec 29, 2011 International Filing Date: Jun 16, 2011
IPC: H01L 31/04
Applicants: SHARP KABUSHIKI KAISHA
シャープ株式会社
TAKAKI, Akihide
高木 明英
NAKAMURA, Masatsugu
中村 昌次
NISHINO, Mitsutoshi
西野 光俊
OHTAKE, Yasutoshi
大竹 保年
Inventors: TAKAKI, Akihide
高木 明英
NAKAMURA, Masatsugu
中村 昌次
NISHINO, Mitsutoshi
西野 光俊
OHTAKE, Yasutoshi
大竹 保年
Title: SILICON WAFER, SEMICONDUCTOR DEVICE, SILICON WAFER PRODUCTION METHOD AND SEMICONDUCTOR DEVICE PRODUCTION METHOD
Abstract:
A silicon wafer (1) is acquired by etching only 5-25 µm into the surface on each side of a crystalline silicon (11) member acquired by slicing a silicon crystal ingot (50). A semiconductor device is provided with the silicon wafer (1), which has 10-150 µm wide facets (62) on the surface, and electrodes (12, 13) on the silicon wafer (1) surface. Furthermore, the silicon wafer (1) production process and the semiconductor device production process include a step where the surface of one side of the crystalline silicon (11) is etched only 5-25 µm with a sodium hydroxide solution that has a sodium hydroxide density of 20-35 mass%.