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1. WO2011160937 - METHOD OF MANUFACTURING THIN FILM TRANSISTORS AND TRANSISTOR CIRCUITS

Publication Number WO/2011/160937
Publication Date 29.12.2011
International Application No. PCT/EP2011/059269
International Filing Date 06.06.2011
IPC
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
786
Thin-film transistors
H01L 29/786 (2006.01)
CPC
H01L 29/4908
H01L 29/66969
H01L 29/7869
Applicants
  • IMEC [BE/BE]; Kapeldreef 75 B-3001 Leuven, BE (AllExceptUS)
  • NEDERLANDSE ORGANISATIE VOOR TOEGEPAST-NATUURWETENSCHAPPELIJK ONDERZOEK (TNO) [NL/NL]; Schoemakerstraat 97 NL-2628 VK Delft, NL (AllExceptUS)
  • KATHOLIEKE UNIVERSITEIT LEUVEN [BE/BE]; K.U. Leuven R&D Minderbroedersstraat 8a, bus 5105 B-3000 Leuven, BE (AllExceptUS)
  • LIN, Wan-Yu; BE (UsOnly)
  • MULLER, Robert [DE/BE]; BE (UsOnly)
Inventors
  • LIN, Wan-Yu; BE
  • MULLER, Robert; BE
Agents
  • BIRD, William E.; Bird Goën & Co. Klein Dalenstraat 42A B-3020 Winksele, BE
Priority Data
61/357,00421.06.2010US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) METHOD OF MANUFACTURING THIN FILM TRANSISTORS AND TRANSISTOR CIRCUITS
(FR) PROCÉDÉ DE FABRICATION DE TRANSISTORS À COUCHES MINCES ET CIRCUITS À TRANSISTORS
Abstract
(EN)
The present invention relates to a method for fabricating a structure such as a transistor, said method comprising the steps of: a. providing a continuous metal layer on an insulating substrate; b. providing a dielectric layer on the continuous metal layer, thereby forming a continuous dielectric layer on top of the continuous metal layer; and c. patterning the metal layer and the dielectric layer, wherein said patterning comprises a wet etching step with an etchant that etches the metal layer substantially faster than the dielectric layer, wherein step (c) is performed after step (b). The present invention further relates to structures thereby obtained.
(FR)
La présente invention concerne un procédé de fabrication d'une structure telle qu'un transistor qui consiste à : a) déposer une couche métallique continue sur un substrat isolant; b) déposer une couche diélectrique sur la couche métallique pour former une couche diélectrique continue sur la couche métallique continue; et c) modeler la couche métallique et la couche diélectrique par une étape de gravure humide avec un agent de gravure qui décape la couche métallique sensiblement plus rapidement que la couche diélectrique. L'étape c) est exécutée après l'étape b). L'invention concerne également les structures ainsi obtenues.
Also published as
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