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1. (WO2011160011) ISOLATION BETWEEN NONVOLATILE MEMORY CELLS BY MEANS OF LOW- DIELECTRIC- CONSTANT DIELECTRICS AND AIR GAPS AND CORRESPONDING MANUFACTURING METHOD

Pub. No.:    WO/2011/160011    International Application No.:    PCT/US2011/040874
Publication Date: Dec 22, 2011 International Filing Date: Jun 17, 2011
IPC: H01L 21/28
H01L 21/8247
H01L 27/115
H01L 21/764
Applicants: SANDISK TECHNOLOGIES, INC.
PURAYATH, Vinod, Robert
MATAMIS, George
CHIEN, Henry
KAI, James
ZHANG, Yuan
Inventors: PURAYATH, Vinod, Robert
MATAMIS, George
CHIEN, Henry
KAI, James
ZHANG, Yuan
Title: ISOLATION BETWEEN NONVOLATILE MEMORY CELLS BY MEANS OF LOW- DIELECTRIC- CONSTANT DIELECTRICS AND AIR GAPS AND CORRESPONDING MANUFACTURING METHOD
Abstract:
High - density semiconductor memory is provided with enhancements to gate - coupling and electrical isolation between discrete devices in non-volatile memory. The intermediate dielectric (438) between control gates (442) and charge storage regions (436) is varied in the row direction, with different dielectric constants for the varied materials to provide adequate inter-gate coupling while protecting from fringing fields and parasitic capacitances. Dielectric caps (451,453) are provided between memory cells and have a dielectric constant smaller than the one of the intermediate dielectric (438). Electrical isolation is further provided, at least in part, by air gaps that are formed in the column (bit line) direction and/or air gaps that are formed in the row (word line) direction.