WIPO logo
Mobile | Deutsch | Español | Français | 日本語 | 한국어 | Português | Русский | 中文 | العربية |
PATENTSCOPE

Search International and National Patent Collections
World Intellectual Property Organization
Search
 
Browse
 
Translate
 
Options
 
News
 
Login
 
Help
 
Machine translation
1. (WO2011159705) WRITE AND ERASE SCHEME FOR RESISTIVE MEMORY DEVICE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2011/159705    International Application No.:    PCT/US2011/040362
Publication Date: 22.12.2011 International Filing Date: 14.06.2011
IPC:
G11C 13/00 (2006.01), G11C 16/34 (2006.01), G11C 16/10 (2006.01), G11C 16/14 (2006.01)
Applicants: CROSSBAR, INC.; 3200 Patrick Henry Drive Suite 110 Santa Clara, CA 95054 (US) (For All Designated States Except US).
NAZARIAN, Hagop; (US) (For US Only).
JO, Sung, Hyun; (US) (For US Only)
Inventors: NAZARIAN, Hagop; (US).
JO, Sung, Hyun; (US)
Agent: CHO, Steve, Y.; Ampacc Law Group, PLLC 6100 219th Street SW, Ste 580 Mountlake Terrace, WA 98043 (US)
Priority Data:
12/815,369 14.06.2010 US
Title (EN) WRITE AND ERASE SCHEME FOR RESISTIVE MEMORY DEVICE
(FR) MÉCANISME D'ÉCRITURE ET D'EFFACEMENT POUR DISPOSITIF MÉMOIRE RÉSISTIF
Abstract: front page image
(EN)A method for programming a two terminal resistive memory device, the method includes applying a bias voltage to a first electrode of a resistive memory cell of the device; measuring a current flowing through the cell; and stopping the applying of the bias voltage if the measured current is equal to or greater than a predetermined value.
(FR)L'invention concerne un procédé servant à programmer un dispositif mémoire résistif à deux borne, le procédé consistant à appliquer une tension de polarisation à une première électrode d'une cellule mémoire résistive du dispositif ; à mesurer un courant circulant à travers la cellule ; et à arrêter l'application de la tension de polarisation si le courant mesuré est supérieur ou égal à une valeur prédéterminée.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)