Search International and National Patent Collections

1. (WO2011158528) METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE AND APPARATUS FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

Pub. No.:    WO/2011/158528    International Application No.:    PCT/JP2011/054010
Publication Date: Dec 22, 2011 International Filing Date: Feb 23, 2011
IPC: H01L 21/336
H01L 21/302
H01L 21/304
H01L 21/316
H01L 29/12
H01L 29/78
Applicants: SUMITOMO ELECTRIC INDUSTRIES, LTD.
住友電気工業株式会社
ITOH, Satomi
伊藤 里美
SHIOMI, Hiromu
塩見 弘
NAMIKAWA, Yasuo
並川 靖生
WADA, Keiji
和田 圭司
SHIMAZU, Mitsuru
嶋津 充
HIYOSHI, Toru
日吉 透
Inventors: ITOH, Satomi
伊藤 里美
SHIOMI, Hiromu
塩見 弘
NAMIKAWA, Yasuo
並川 靖生
WADA, Keiji
和田 圭司
SHIMAZU, Mitsuru
嶋津 充
HIYOSHI, Toru
日吉 透
Title: METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE AND APPARATUS FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
Abstract:
Disclosed is a method for manufacturing a SiC semiconductor device (200), which is provided with: a step of preparing a silicon carbide semiconductor (100), which includes a first surface (100a) having an impurity implanted into at least a part thereof; a step of forming a second surface (100b) by dry-etching the first surface (100a) of the silicon carbide semiconductor (100) using a gas containing hydrogen gas; and a step of forming, on the second surface (100b), an oxide film (126) that constitutes the SiC semiconductor device (200).