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1. (WO2011156454) CRYSTALLIZATION OF MULTI-LAYERED AMORPHOUS FILMS

Pub. No.:    WO/2011/156454    International Application No.:    PCT/US2011/039574
Publication Date: Dec 15, 2011 International Filing Date: Jun 8, 2011
IPC: H01L 21/00
Applicants: BOARD OF TRUSTEES OF THE UNIVERSITY OF ARKANSAS
SILICON SOLAR SOLUTIONS, LLC
HUTCHINGS, Douglas, Arthur
SHUMATE, Seth, Daniel
NASEEM, Hameed
SHARIF, Khalil, Hashem
Inventors: HUTCHINGS, Douglas, Arthur
SHUMATE, Seth, Daniel
NASEEM, Hameed
SHARIF, Khalil, Hashem
Title: CRYSTALLIZATION OF MULTI-LAYERED AMORPHOUS FILMS
Abstract:
In one aspect, crystallization of multiple layers of amorphous materials is disclosed. In one embodiment, multiple layers of amorphous materials such as amorphous silicon, silicon carbide, and/or germanium are deposited using deposition methods such as PECVD or sputtering. A layer of metal such as aluminum is deposited on the surface of the deposited amorphous materials using sputtering or evaporation, and the structure is annealed in a hydrogen environment. The structure is contained on a semiconductor substrate, glass, a flexible metal/organic film, or other type of substrate.