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1. (WO2011155341) FREESTANDING GAN CRYSTAL SUBSTRATE AND MANUFACTURING METHOD FOR SAME

Pub. No.:    WO/2011/155341    International Application No.:    PCT/JP2011/062106
Publication Date: Dec 15, 2011 International Filing Date: May 26, 2011
IPC: C30B 29/38
C30B 25/16
H01L 21/205
Applicants: SUMITOMO ELECTRIC INDUSTRIES,LTD.
住友電気工業株式会社
FUJIWARA, Shinsuke
藤原 伸介
UEMATSU, Koji
上松 康二
KASAI, Hitoshi
笠井 仁
OKAHISA, Takuji
岡久 拓司
Inventors: FUJIWARA, Shinsuke
藤原 伸介
UEMATSU, Koji
上松 康二
KASAI, Hitoshi
笠井 仁
OKAHISA, Takuji
岡久 拓司
Title: FREESTANDING GAN CRYSTAL SUBSTRATE AND MANUFACTURING METHOD FOR SAME
Abstract:
Provided is a freestanding GaN crystal substrate that is electrically conductive and emits very little yellow light from all surfaces, and a method for manufacturing the same. The present freestanding GaN crystal substrate grown by HVPE, has a (0001) face, and a {10-11} face and/or a {11-22} face existing together as crystal growth surfaces excluding crystal side surfaces, wherein the (0001) face growth crystal region has a carbon concentration of no more than 5x1016 at/cm3, a silicon concentration of at least 5 x 1017 silicon at/cm3 and no more than 2 x 1018 at/cm3, and an oxygen concentration of no more than 1 x 1017 at/cm3, and in a faceted crystal region with at least a {10-11} face and/or a {11-22} face as a growth face, carbon concentration is no more than 3 x 1016 at/cm3, silicon concentration is no more than 5 x 1017 at/cm3, and oxygen concentration is at least 5 x 1017 at/cm3 and no more than 5 x 1018 at/cm3.