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1. (WO2011155302) SEMICONDUCTOR DEVICE
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2011/155302 International Application No.: PCT/JP2011/061589
Publication Date: 15.12.2011 International Filing Date: 13.05.2011
IPC:
H01L 29/786 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
786
Thin-film transistors
Applicants:
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. [JP/JP]; 398, Hase, Atsugi-shi, Kanagawa 2430036, JP (AllExceptUS)
YAMAZAKI, Shunpei [JP/JP]; JP (UsOnly)
Inventors:
YAMAZAKI, Shunpei; JP
Priority Data:
2010-13442811.06.2010JP
2011-08811912.04.2011JP
Title (EN) SEMICONDUCTOR DEVICE
(FR) DISPOSITIF À SEMI-CONDUCTEUR
Abstract:
(EN) One object is to provide a semiconductor device including an oxide semiconductor with improved electrical characteristics. The semiconductor device includes a first insulating film including an element of Group 13 and oxygen; an oxide semiconductor film partly in contact with the first insulating film; a source electrode and a drain electrode electrically connected to the oxide semiconductor film; a gate electrode overlapping with the oxide semiconductor film; and a second insulating film partly in contact with the oxide semiconductor film, between the oxide semiconductor film and the gate electrode. Further, the first insulating film including an element of Group 13 and oxygen includes a region where an amount of oxygen is greater than that in a stoichiometric composition ratio.
(FR) La présente invention a notamment pour objet un dispositif à semi-conducteur qui comporte un semi-conducteur oxyde présentant des caractéristiques électriques améliorées. Le dispositif à semi-conducteur comprend : un premier film isolant comportant un élément du groupe 13 et de l'oxygène ; un film de semi-conducteur oxyde en contact partiel avec le premier film isolant ; une électrode source et une électrode déversoir connectées électriquement au film de semi-conducteur oxyde ; une électrode grille chevauchant ledit film de semi-conducteur oxyde ; et un second film isolant en contact partiel avec le film de semi-conducteur oxyde, entre ce film de semi-conducteur oxyde et l'électrode grille. En outre, le premier film isolant comportant un élément du groupe 13 et de l'oxygène comprend une région où la quantité d'oxygène est supérieure à celle existant dans un rapport de composition stœchiométrique.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)