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1. (WO2011153357) METHOD FOR PROVIDING LATERAL THERMAL PROCESSING OF THIN FILMS ON LOW-TEMPERATURE SUBSTRATES
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2011/153357    International Application No.:    PCT/US2011/038937
Publication Date: 08.12.2011 International Filing Date: 02.06.2011
IPC:
C23C 16/56 (2006.01), H01L 21/20 (2006.01)
Applicants: NCC NANO, LLC [US/US]; Three Forest Plaza, Suite 930 12221 Merit Drive Dallas, TX 75251 (US) (For All Designated States Except US).
SCHRODER, Kurt, A. [US/US]; (US) (For US Only).
WENZ, Robert, P. [US/US]; (US) (For US Only)
Inventors: SCHRODER, Kurt, A.; (US).
WENZ, Robert, P.; (US)
Agent: NG, Antony; Dillon & Yudell LLP 8911 N. Capital Of Texas Hwy. Suite 2110 Austin, TX 78759 (US)
Priority Data:
61/350,765 02.06.2010 US
Title (EN) METHOD FOR PROVIDING LATERAL THERMAL PROCESSING OF THIN FILMS ON LOW-TEMPERATURE SUBSTRATES
(FR) PROCÉDÉ DE TRAITEMENT THERMIQUE LATÉRAL DE FILMS MINCES SUR DES SUBSTRATS À BASSE TEMPÉRATURE
Abstract: front page image
(EN)A method for thermally processing a minimally absorbing thin film in a selective manner is disclosed. Two closely spaced absorbing traces are patterned in thermal contact with the thin film. A pulsed radiant source is used to heat the two absorbing traces, and the thin film is thermally processed via conduction between the two absorbing traces. This method can be utilized to fabricate a thin film transistor (TFT) in which the thin film is a semiconductor and the absorbers are the source and the drain of the TFT.
(FR)L'invention concerne un procédé de traitement thermique sélectif d'un film mince à absorption minimale. Deux traces absorbantes étroitement espacées sont modelées en contact thermique avec le film mince. Une source radiante pulsée est utilisée pour chauffer les deux traces absorbantes, et le film mince est traité thermiquement par conduction entre les deux traces. Ce procédé peut être utilisé pour fabriquer un transistor à couches minces (TFT) dans lequel le film mince est un semi-conducteur et les traces absorbantes constituent la source et le drain du TFT.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)