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Machine translation
1. (WO2011152938) MEMORY DEVICE COMPRISING A JUNCTIONLESS THIN- FILM TRANSISTOR
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2011/152938    International Application No.:    PCT/US2011/034517
Publication Date: 08.12.2011 International Filing Date: 29.04.2011
IPC:
H01L 21/336 (2006.01), H01L 21/8246 (2006.01), H01L 21/8247 (2006.01), H01L 21/84 (2006.01), H01L 27/112 (2006.01), H01L 27/12 (2006.01), H01L 29/788 (2006.01), H01L 29/792 (2006.01), H01L 21/77 (2006.01), H01L 27/115 (2006.01), B82Y 10/00 (2011.01), G11C 16/04 (2006.01), H01L 27/06 (2006.01), H01L 27/24 (2006.01), H01L 29/06 (2006.01)
Applicants: SANDISK TECHNOLOGIES INC. [US/US]; Two Legacy Town Center 6900 North Dallas Parkway Plano, Texas 75024 (US) (For All Designated States Except US).
SAMACHISA, George [US/US]; (US) (For US Only).
ALSMEIER, Johann [DE/US]; (US) (For US Only).
MIHNEA, Andrei [US/US]; (US) (For US Only)
Inventors: SAMACHISA, George; (US).
ALSMEIER, Johann; (US).
MIHNEA, Andrei; (US)
Agent: RADOMSKY, Leon; The Marbury Law Group, PLLC 11800 Sunrise Valley Drive Suite 1000 Reston, Virginia 20191 (US)
Priority Data:
61/345,352 17.05.2010 US
12/848,458 02.08.2010 US
Title (EN) MEMORY DEVICE COMPRISING A JUNCTIONLESS THIN- FILM TRANSISTOR
(FR) MÉMOIRE FLASH NAND À TFT SANS JONCTION
Abstract: front page image
(EN)A non-volatile memory device (200) includes at least one junctionless transistor and a storage region. The junctionless transistor is a TFT and includes a junctionless, heavily doped semiconductor channel (204) having two dimensions less that 100 nm. The memory device can be a NAND flash memory or a resistance - switching memory. The memory cells can be integrated in three dimensions.
(FR)L'invention concerne un dispositif de mémoire non volatile qui comprend au moins un transistor sans jonction et une région de stockage. Le transistor sans jonction comprend un canal semiconducteur sans jonction et fortement dopé dont deux dimensions sont inférieures à 100 nm.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)