WIPO logo
Mobile | Deutsch | Español | Français | 日本語 | 한국어 | Português | Русский | 中文 | العربية |
PATENTSCOPE

Search International and National Patent Collections
World Intellectual Property Organization
Search
 
Browse
 
Translate
 
Options
 
News
 
Login
 
Help
 
Machine translation
1. (WO2011151990) THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2011/151990    International Application No.:    PCT/JP2011/002859
Publication Date: 08.12.2011 International Filing Date: 23.05.2011
IPC:
H01L 29/786 (2006.01), H01L 21/336 (2006.01), H01L 21/363 (2006.01)
Applicants: SHARP KABUSHIKI KAISHA [JP/JP]; 22-22, Nagaike-cho, Abeno-ku, Osaka-shi, Osaka 5458522 (JP) (For All Designated States Except US).
MORIGUCHI, Masao; (For US Only).
TAKEI, Michiko; (For US Only).
KANZAKI, Yohsuke; (For US Only).
INOUE, Tsuyoshi; (For US Only).
FUKAYA, Tetsuo; (For US Only).
TAKANISHI, Yudai; (For US Only).
KUSUMI, Takatsugu; (For US Only).
NAKATANI, Yoshiki; (For US Only).
OKAMOTO, Tetsuya; (For US Only).
NAKANISHI, Kenji; (For US Only)
Inventors: MORIGUCHI, Masao; .
TAKEI, Michiko; .
KANZAKI, Yohsuke; .
INOUE, Tsuyoshi; .
FUKAYA, Tetsuo; .
TAKANISHI, Yudai; .
KUSUMI, Takatsugu; .
NAKATANI, Yoshiki; .
OKAMOTO, Tetsuya; .
NAKANISHI, Kenji;
Agent: MAEDA, Hiroshi; Osaka-Marubeni Bldg.,5-7,Hommachi 2-chome, Chuo-ku, Osaka-shi, Osaka 5410053 (JP)
Priority Data:
2010-125655 01.06.2010 JP
Title (EN) THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF
(FR) TRANSISTOR À COUCHE MINCE, ET PROCÉDÉ DE FABRICATION DE CELUI-CI
(JA) 薄膜トランジスタ及びその製造方法
Abstract: front page image
(EN)Disclosed is a TFT (20) comprising a gate electrode (21), a gate insulation film (22), a semiconductor layer (23), a source electrode (24), and a drain electrode (25). The semiconductor layer (23) comprises a metal-oxide semiconductor (IGZO) and has a source area (23a) in contact with the source electrode (24), a drain area (23b) in contact with the drain electrode (25), and a channel area (23c) between said source area (23a) and drain area (23b). In the semiconductor layer (23), at least the channel area (23c) is has a reduced zone (30) with a content ratio of an elemental metal, such as In, higher than that in other areas.
(FR)L'invention concerne un transistor à couche mince (20) qui est équipé notamment : d'une électrode grille (21) ou d'un film isolant de grille (22), d'une couche semi-conductrice (23), d'une électrode source (24), et d'une électrode de drain (25). La couche semi-conductrice (23) est constituée d'un semi-conducteur en oxyde de métal (IGZO), et possède : une partie source (23a) en contact avec l'électrode source (24); une partie drain (23b) en contact avec l'électrode de drain (25); et une partie canal (23c) entre la partie source (23a) et la partie drain (23b). Une zone de réduction (30) dont la teneur en métal simple tel que In, ou similaire, est élevée en comparaison avec les autres parties, est formée au moins dans la partie canal (23c) de la couche semi-conductrice (23).
(JA) ゲート電極21やゲート絶縁膜22、半導体層23、ソース電極24、ドレイン電極25などを備えるTFT20である。半導体層23は、金属酸化物半導体(IGZO)からなり、ソース電極24が接するソース部23aと、ドレイン電極25が接するドレイン部23bと、これらソース部23a及びドレイン部23bの間のチャネル部23cとを有している。半導体層23のうち、少なくともチャネル部23cに、他の部分と比べてIn等の金属単体の含有率の高い還元領域30が形成されている。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)