WIPO logo
Mobile | Deutsch | Español | Français | 日本語 | 한국어 | Português | Русский | 中文 | العربية |
PATENTSCOPE

Search International and National Patent Collections
World Intellectual Property Organization
Search
 
Browse
 
Translate
 
Options
 
News
 
Login
 
Help
 
Machine translation
1. (WO2011149982) METHOD OF FORMING BACK CONTACT TO A CADMIUM TELLURIDE SOLAR CELL
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2011/149982    International Application No.:    PCT/US2011/037798
Publication Date: 01.12.2011 International Filing Date: 24.05.2011
IPC:
H01L 31/18 (2006.01)
Applicants: ENCORESOLAR, INC. [US/US]; 6541 Via Del Oro, Unit B San Jose, CA 95119 (US) (For All Designated States Except US).
BASOL, Bulent, M. [US/US]; (US) (For US Only)
Inventors: BASOL, Bulent, M.; (US)
Agent: BLUMENTHAL, David, A.; Morrison & Foerster LLP 555 West Fifth Street Los Angeles, CA 90013-1024 (US)
Priority Data:
12/880,671 13.09.2010 US
61/396,227 24.05.2010 US
Title (EN) METHOD OF FORMING BACK CONTACT TO A CADMIUM TELLURIDE SOLAR CELL
(FR) PROCÉDÉ POUR FORMER UN CONTACT REPOS SUR UNE CELLULE SOLAIRE AU TELLURURE DE CADMIUM
Abstract: front page image
(EN)A method of forming an ohmic contact to a surface of a Cd and Te containing compound film as may be found, for example in a photovoltaic cell. The method comprises forming a Te-rich layer on the surface of the Cd and Te containing compound film; depositing an interface layer on the Te-rich layer; and laying down a contact layer on the interface layer. The interface layer is composed of a metallic form of Zn and Cu.
(FR)L'invention concerne un procédé pour former un contact ohmique sur une surface d'un film composite contenant du Cd et du Te, comme on peut trouver par exemple dans une cellule photovoltaïque. Ce procédé consiste à former une couche riche en Te sur la surface du film composite contenant du Cd et du Te, à déposer une couche interface sur la couche riche en Te, et à appliquer une couche de contact sur la couche interface. La couche interface est constituée d'une forme métallique de Zn et de Cu.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)