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1. (WO2011148445) SEMICONDUCTOR DEVICE AND PROCESS FOR PRODUCTION THEREOF
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2011/148445    International Application No.:    PCT/JP2010/007014
Publication Date: 01.12.2011 International Filing Date: 01.12.2010
IPC:
H01L 21/60 (2006.01), H01L 21/3205 (2006.01), H01L 23/52 (2006.01), H01L 25/065 (2006.01), H01L 25/07 (2006.01), H01L 25/18 (2006.01)
Applicants: PANASONIC CORPORATION [JP/JP]; 1006, Oaza Kadoma, Kadoma-shi, Osaka 5718501 (JP) (For All Designated States Except US).
AOI, Nobuo; (For US Only)
Inventors: AOI, Nobuo;
Agent: MAEDA, Hiroshi; Osaka-Marubeni Bldg.,5-7,Hommachi 2-chome, Chuo-ku, Osaka-shi, Osaka 5410053 (JP)
Priority Data:
2010-121311 27.05.2010 JP
Title (EN) SEMICONDUCTOR DEVICE AND PROCESS FOR PRODUCTION THEREOF
(FR) DISPOSITIF À SEMI-CONDUCTEURS ET SON PROCÉDÉ DE FABRICATION
(JA) 半導体装置及びその製造方法
Abstract: front page image
(EN)An insulating film (3) is formed so as to cover a wiring line formed on a substrate (1). An opening (4) is formed on the insulating film (3) so as to expose the wiring line. An electrode terminal (9) comprising multiple conductive material microparticles (5) is formed in the opening (4).
(FR)Selon l'invention, un film isolant (3) est formé de manière à recouvrir une ligne conductrice formée sur un substrat (1). Une ouverture (4) est formée sur le film isolant (3) pour exposer la ligne conductrice. Une borne d'électrode (9) comprenant de multiples microparticules de matériau conducteur (5) est formée dans l'ouverture (4).
(JA) 基板(1)上に形成された配線を覆うように絶縁膜(3)が形成されている。絶縁膜(3)に、前記配線が露出するように開口部(4)が形成されている。開口部(4)内に、複数の導電体微粒子(5)から構成された電極端子(9)が形成されている。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)