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1. (WO2011148435) SEMICONDUCTOR DEVICE AND PROCESS FOR PRODUCTION THEREOF

Pub. No.:    WO/2011/148435    International Application No.:    PCT/JP2010/006198
Publication Date: Dec 1, 2011 International Filing Date: Oct 19, 2010
IPC: H01L 21/8238
H01L 27/092
Applicants: PANASONIC CORPORATION
パナソニック株式会社
YAMADA, Takayuki
山田隆順
ARAI, Hideyuki
新井秀幸
Inventors: YAMADA, Takayuki
山田隆順
ARAI, Hideyuki
新井秀幸
Title: SEMICONDUCTOR DEVICE AND PROCESS FOR PRODUCTION THEREOF
Abstract:
A high-melting-point metal film (16) is formed on a gate-insulating-film-forming film. Next, the high-melting-point metal film is patterned, and a first region on the gate-insulating-film-forming film is exposed. At the same time, a metal mask (16b) that covers a second region on the gate-insulating-film-forming film is formed, and a dummy metal mask (16c) that covers a third region on the gate-insulating film-forming film is formed. Next, a metal compound film (17) for adjustment purposes is formed on the gate-insulating-film-forming film. Next, a metal for adjustment purposes contained in the metal compound film for adjustment purposes is introduced into the gate-insulating-film-forming film through a heat treatment using the metal mask and the dummy metal mask as introduction-inhibiting masks. Next, the metal compound film for adjustment purposes, the metal mask and the dummy metal mask are removed. Next, a gate-electrode-forming film (20) is formed on the gate-insulating-film-forming film. Next, the gate-electrode-forming film and the gate-insulating-film-forming film are patterned to form first and second gate insulating films (15a, 15b) and first and second gate electrodes (20a, 20b).