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1. (WO2011145012) COMPOSITE GROWTH SUBSTRATE FOR GROWING A SEMICONDUCTOR DEVICE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2011/145012    International Application No.:    PCT/IB2011/051844
Publication Date: 24.11.2011 International Filing Date: 27.04.2011
IPC:
H01L 21/02 (2006.01)
Applicants: KONINKLIJKE PHILIPS ELECTRONICS N.V. [NL/NL]; Groenewoudseweg 1 NL-5621 BA Eindhoven (NL) (For All Designated States Except US).
PHILIPS LUMILEDS LIGHTING COMPANY LLC [US/US]; 370 West Trimble Road MS 91/MG San Jose, California 95131 (US) (For All Designated States Except US).
KIM, Andrew Y. [US/US]; (US) (For US Only)
Inventors: KIM, Andrew Y.; (US)
Agent: BEKKERS, Joost, J.J.; High Tech Campus Building 44 NL-5656 AE Eindhoven (NL)
Priority Data:
12/783,354 19.05.2010 US
Title (EN) COMPOSITE GROWTH SUBSTRATE FOR GROWING A SEMICONDUCTOR DEVICE
(FR) SUBSTRAT À CROISSANCE COMPOSITE POUR LA CROISSANCE D'UN DISPOSITIF SEMI-CONDUCTEUR
Abstract: front page image
(EN)A method according to embodiments of the invention includes providing an epitaxial structure comprising a donor layer and a strained layer. The epitaxial structure is treated to cause the strained layer to relax. Relaxation of the strained layer causes an in-plane lattice constant of the donor layer to change.
(FR)Le procédé selon les modes de réalisation de l'invention consiste à produire une structure épitaxique comprenant une couche donneuse et une couche contrainte. La structure épitaxique est traitée pour que la couche contrainte se relâche. Le relâchement de la couche contrainte fait changer une constante du réseau cristallin dans le plan de la couche donneuse.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)