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1. (WO2011143918) LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2011/143918    International Application No.:    PCT/CN2010/080493
Publication Date: 24.11.2011 International Filing Date: 30.12.2010
IPC:
H01L 33/20 (2010.01), H01L 33/58 (2010.01)
Applicants: ENRAYTEK OPTOELECTRONICS CO., LTD. [CN/CN]; Room 101, Building 5 200 Niudun Road, Pudong New Area Shanghai 201203 (CN) (For All Designated States Except US).
CHANG, Richard, Rugin [US/CN]; (CN) (For US Only).
XIAO, Deyuan [CN/CN]; (CN) (For US Only)
Inventors: CHANG, Richard, Rugin; (CN).
XIAO, Deyuan; (CN)
Agent: SHANGHAI SAVVY INTELLECTUAL PROPERTY AGENCY; Room 701(3), Block B 666 East Beijing Road, Huangpu District Shanghai 200001 (CN)
Priority Data:
201010530991.6 03.11.2010 CN
Title (EN) LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF
(FR) DIODE ÉLECTROLUMINESCENTE, ET PROCÉDÉ DE FABRICATION CORRESPONDANT
(ZH) 发光二极管及其制造方法
Abstract: front page image
(EN)A light emitting diode and the manufacturing method thereof are provided. Said light emitting diode includes: a substrate; an epitaxial layer, an active layer and a cap layer are located in sequence on said substrate; wherein said substrate has multiple microlens structures on its surface far away from the epitaxial layer, and the surface of said microlens structures has multiple salients. When the light emitted from the active layer goes through the surfaces of said microlens structures or those of said salients, its incident angle is always smaller than the critical angle of total reflection, thus total reflection will not occur, thereby ensuring that most light can goes outside through the surfaces of said microlens structures or those of said salients, improving the external quantum efficiency of the light emitting diode, avoiding an internal temperature rise of the light emitting diode, and improving the performance of the light emitting diode.
(FR)La présente invention concerne une diode électroluminescente, et le procédé de fabrication correspondant. Cette diode électroluminescente comporte un substrat garni successivement d'une couche épitaxiale, d'une couche active, et d'une couche de couverture. La surface de ce substrat la plus éloignée de la couche épitaxiale est garnie de plusieurs structures en microlentilles dont la surface comporte des saillants multiples. Quand la lumière émise depuis la couche active traverse les surfaces de ces structures en microlentilles ou celles de leurs saillants, son angle d'incidence est inférieur à l'angle critique de la réflexion totale, ce qui évite le phénomène de réflexion totale. De ce fait, l'invention garantit que la plus grande partie de la lumière, en traversant les surfaces desdites structures en microlentilles ou celles desdits saillants, améliore l'efficacité quantitative externe de la diode électroluminescente, évite la montée de la température interne de la diode électroluminescente, et améliore le rendement de la diode électroluminescente.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)