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1. (WO2011142402) METHOD FOR PRODUCING GALLIUM TRICHLORIDE GAS AND METHOD FOR PRODUCING NITRIDE SEMICONDUCTOR CRYSTAL
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2011/142402    International Application No.:    PCT/JP2011/060892
Publication Date: 17.11.2011 International Filing Date: 11.05.2011
IPC:
C30B 29/38 (2006.01), C23C 16/34 (2006.01), C30B 25/14 (2006.01), H01L 21/205 (2006.01)
Applicants: National University Corporation Tokyo University of Agriculture and Technology [JP/JP]; 3-8-1, Harumi-cho, Fuchu-shi, Tokyo 1838538 (JP) (For All Designated States Except US).
KOUKITU, Akinori [JP/JP]; (JP) (For US Only).
KUMAGAI, Yoshinao [JP/JP]; (JP) (For US Only)
Inventors: KOUKITU, Akinori; (JP).
KUMAGAI, Yoshinao; (JP)
Agent: NAKAJIMA, Jun; TAIYO, NAKAJIMA & KATO, Seventh Floor, HK-Shinjuku Bldg., 3-17, Shinjuku 4-chome, Shinjuku-ku, Tokyo 1600022 (JP)
Priority Data:
2010-110064 12.05.2010 JP
Title (EN) METHOD FOR PRODUCING GALLIUM TRICHLORIDE GAS AND METHOD FOR PRODUCING NITRIDE SEMICONDUCTOR CRYSTAL
(FR) PROCÉDÉ POUR LA PRODUCTION DE GAZ DE TRICHLORURE DE GALLIUM ET PROCÉDÉ POUR LA PRODUCTION DE CRISTAL SEMI-CONDUCTEUR AU NITRURE
(JA) 三塩化ガリウムガスの製造方法及び窒化物半導体結晶の製造方法
Abstract: front page image
(EN)Disclosed is a method for producing gallium trichloride gas comprising a first step for generating gallium monochloride gas by reacting metallic gallium and chlorine gas and a second step for generating gallium trichloride gas by reacting the generated gallium monochloride gas with chlorine gas.
(FR)La présente invention concerne un procédé pour la production de gaz de trichlorure de gallium comprenant une première étape pour la génération de gaz de monochlorure de gallium par la réaction de gallium métallique et du gaz de chlore et une seconde étape pour la génération de gaz de trichlorure de gallium par la réaction du gaz de monochlorure de gallium généré avec du gaz de chlore.
(JA) 本発明では、金属ガリウムと塩素ガスとを反応させて一塩化ガリウムガスを生成する第1工程と、生成した一塩化ガリウムガスと塩素ガスとを反応させて三塩化ガリウムガスを生成する第2工程と、を有する三塩化ガリウムガスの製造方法が提供される。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)